Overview
The FDP86363-F085 is an N-Channel PowerTrench® MOSFET manufactured by onsemi. This device is designed for high-performance applications, offering a combination of low on-resistance, high current handling, and robust thermal characteristics. Although it is not recommended for new designs, it remains a significant component in existing systems due to its reliability and performance.
Key Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDSS | Drain-to-Source Voltage | 80 | V | |||
| VGS | Gate-to-Source Voltage | ±20 | V | |||
| ID | Drain Current - Continuous (VGS=10) | TJ = 25°C | 110 | A | ||
| PD | Power Dissipation | 300 | W | |||
| TJ, TSTG | Operating and Storage Temperature | -55 | +175 | °C | ||
| RθJC | Thermal Resistance, Junction to Case | 0.5 | °C/W | |||
| RθJA | Maximum Thermal Resistance, Junction to Ambient | 43 | °C/W | |||
| VGS(th) | Gate to Source Threshold Voltage | VGS = VDS, ID = 250 μA | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Drain to Source on Resistance | ID = 80 A, VGS = 10 V | 2.4 | mΩ | ||
| Qg(tot) | Total Gate Charge | VGS = 10 V, ID = 80 A | 131 | nC |
Key Features
- Typical RDS(on) = 2.4 mΩ at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12 V Systems
Q & A
- What is the maximum drain-to-source voltage of the FDP86363-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the typical on-resistance of the FDP86363-F085 MOSFET?
The typical drain to source on-resistance (RDS(on)) is 2.4 mΩ at VGS = 10 V and ID = 80 A.
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature range is from -55°C to +175°C.
- Is the FDP86363-F085 MOSFET RoHS compliant?
Yes, the FDP86363-F085 MOSFET is Pb-Free and RoHS compliant.
- What are some typical applications of the FDP86363-F085 MOSFET?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.
- What is the maximum continuous drain current of the FDP86363-F085 MOSFET?
The maximum continuous drain current (ID) is 110 A at VGS = 10 V and TJ = 25°C.
- What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.5 °C/W.
- Is the FDP86363-F085 MOSFET qualified to AEC-Q101 standards?
Yes, the FDP86363-F085 MOSFET is qualified to AEC-Q101 standards and is PPAP capable.
- What is the maximum single pulse avalanche energy (EAS) for this MOSFET?
The maximum single pulse avalanche energy (EAS) is 512 mJ.
- Why is the FDP86363-F085 MOSFET not recommended for new designs?
The FDP86363-F085 MOSFET is not recommended for new designs; users should contact their onsemi representative for information on alternative parts.
