FCPF1300N80ZYD
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Fairchild Semiconductor FCPF1300N80ZYD

Manufacturer No:
FCPF1300N80ZYD
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
MOSFET N-CH 800V 4A TO220F-3
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FCPF1300N80ZYD is an N-Channel SuperFET® II MOSFET from Fairchild Semiconductor, now part of onsemi. This high-voltage super-junction (SJ) MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. Designed to minimize conduction loss and provide superior switching performance, this MOSFET is ideal for various high-power applications. It features a drain to source voltage (Vdss) of 800V, a continuous drain current (Id) of 4A at 25°C, and a typical on-resistance (Rds(on)) of 1.3 Ω at 10V and 2A.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 4 A
Drain to Source On-Resistance (Rds(on)) @ 10V, 2A 1.3 Ω
Gate to Source Voltage (Vgs) ±20 V
Gate-Source Threshold Voltage (Vgs(th)) 4.5 V @ 400µA
Gate Charge (Qg) @ 10V 16.2 nC
Power Dissipation (Pd) @ 25°C 24 W
Operating Temperature Range -55 to +150 °C
Package / Case TO-220-3
Mounting Style Through Hole

Key Features

  • Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
  • Low Eoss (Typ. 1.57 uJ @ 400V)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Internal gate-source ESD diode to withstand over 2kV HBM surge stress

Applications

  • AC - DC Power Supply
  • LED Lighting
  • Audio and Laptop Adapters
  • ATX Power and Industrial Power Applications

Q & A

  1. What is the drain to source voltage (Vdss) of the FCPF1300N80ZYD MOSFET?

    The drain to source voltage (Vdss) is 800V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 4A.

  3. What is the typical on-resistance (Rds(on)) of the FCPF1300N80ZYD MOSFET?

    The typical on-resistance (Rds(on)) is 1.3 Ω at 10V and 2A.

  4. Is the FCPF1300N80ZYD MOSFET RoHS compliant?
  5. What is the gate charge (Qg) of this MOSFET at 10V?

    The gate charge (Qg) at 10V is 16.2 nC.

  6. What are the typical applications of the FCPF1300N80ZYD MOSFET?

    Typical applications include AC - DC Power Supply, LED Lighting, Audio and Laptop Adapters, ATX Power, and Industrial Power Applications.

  7. What is the operating temperature range of the FCPF1300N80ZYD MOSFET?

    The operating temperature range is -55 to +150°C.

  8. What is the package type of the FCPF1300N80ZYD MOSFET?

    The package type is TO-220-3.

  9. Does the FCPF1300N80ZYD MOSFET have improved ESD capability?
  10. What is the power dissipation (Pd) of the FCPF1300N80ZYD MOSFET at 25°C?

    The power dissipation (Pd) at 25°C is 24W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3 (Y-Forming)
Package / Case:TO-220-3 Full Pack, Formed Leads
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Same Series
FCPF1300N80Z
FCPF1300N80Z
MOSFET N-CH 800V 4A TO220F

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