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NDS355AN-F169
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Fairchild Semiconductor NDS355AN-F169

Manufacturer No:
NDS355AN-F169
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
N-CHANNEL LOGIC LEVEL ENHANCEMEN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS355AN-F169 is an N-Channel logic level enhancement mode power field effect transistor produced by Fairchild Semiconductor, now part of onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. It is particularly suited for low voltage applications in devices such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are critical.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)30V
Gate-Source Voltage (VGS)±20V
Maximum Drain Current (ID)1.7A
Maximum Power Dissipation (PD)0.5W
Operating Temperature Range-55°C to 150°C°C
On-State Resistance (RDS(on)) @ VGS = 4.5V0.125ΩΩ
On-State Resistance (RDS(on)) @ VGS = 10V0.085ΩΩ
Gate Threshold Voltage (VGS(th))1 to 2V
Input Capacitance (Ciss)195 pF @ 15VpF
Package TypeSOT-23-3

Key Features

  • High density cell design for extremely low RDS(on)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • Pb-Free device
  • Fast switching and low in-line power loss, making it suitable for battery-powered circuits

Applications

The NDS355AN-F169 is particularly suited for low voltage applications in:

  • Notebook computers
  • Portable phones
  • PCMCIA cards
  • Other battery-powered circuits where fast switching and low power loss are necessary

Q & A

  1. What is the maximum drain-source voltage of the NDS355AN-F169?
    The maximum drain-source voltage (VDSS) is 30V.
  2. What is the maximum gate-source voltage of the NDS355AN-F169?
    The maximum gate-source voltage (VGS) is ±20V.
  3. What is the maximum continuous drain current of the NDS355AN-F169?
    The maximum continuous drain current (ID) is 1.7A.
  4. What is the on-state resistance of the NDS355AN-F169 at VGS = 10V?
    The on-state resistance (RDS(on)) at VGS = 10V is 0.085Ω.
  5. What is the operating temperature range of the NDS355AN-F169?
    The operating temperature range is -55°C to 150°C.
  6. What package type is used for the NDS355AN-F169?
    The package type is SOT-23-3.
  7. Is the NDS355AN-F169 a Pb-Free device?
    Yes, the NDS355AN-F169 is a Pb-Free device.
  8. What are some typical applications of the NDS355AN-F169?
    Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
  9. What is the input capacitance (Ciss) of the NDS355AN-F169?
    The input capacitance (Ciss) is 195 pF at 15V.
  10. What is the gate threshold voltage (VGS(th)) of the NDS355AN-F169?
    The gate threshold voltage (VGS(th)) is between 1 to 2V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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