Overview
The FDC658AP-G is a single P-Channel Logic Level MOSFET produced by Fairchild Semiconductor, now part of onsemi. This device is fabricated using onsemi's advanced PowerTrench process, which is optimized for low on-state resistance and minimal gate charge, enhancing its switching performance. The FDC658AP-G is particularly suited for applications requiring high efficiency and reliability in power management.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage - Continuous | VGS | ±25 | V |
| Drain Current - Continuous | ID | -4 | A |
| Maximum Power Dissipation | PD | 1.6 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 78 | °C/W |
| Thermal Resistance, Junction-to-Case | RθJC | 30 | °C/W |
| Static Drain-Source On-Resistance | rDS(on) | 50 mΩ @ VGS = -10 V, ID = -4 A | mΩ |
| Static Drain-Source On-Resistance | rDS(on) | 75 mΩ @ VGS = -4.5 V, ID = -3.4 A | mΩ |
| Gate Threshold Voltage | VGS(TH) | -1 to -3 | V |
| Total Gate Charge | Qg | 6 to 8.1 nC | nC |
Key Features
- High performance trench technology for extremely low rDS(on)
- Low gate charge for superior switching performance
- Pb-Free, Halide Free, and RoHS Compliant
- Small footprint SUPERSOT-6 package (72% smaller than standard SO-8)
- Low profile (1 mm thick)
- Optimized for battery power management applications
Applications
- Battery management
- Load switch
- Battery protection
- DC/DC conversion
- Notebook computer applications: load switching and power management, battery charging circuits
Q & A
- What is the maximum drain-source voltage of the FDC658AP-G MOSFET?
The maximum drain-source voltage (VDS) is -30 V.
- What is the continuous drain current rating of the FDC658AP-G?
The continuous drain current (ID) is -4 A.
- What is the typical on-state resistance (rDS(on)) of the FDC658AP-G at VGS = -10 V and ID = -4 A?
The typical on-state resistance (rDS(on)) is 50 mΩ.
- What is the thermal resistance from junction to ambient (RθJA) for the FDC658AP-G?
The thermal resistance from junction to ambient (RθJA) is 78 °C/W.
- Is the FDC658AP-G RoHS compliant?
- What are the typical applications of the FDC658AP-G MOSFET?
The FDC658AP-G is typically used in battery management, load switching, battery protection, and DC/DC conversion.
- What is the gate threshold voltage range for the FDC658AP-G?
The gate threshold voltage (VGS(TH)) range is -1 to -3 V.
- What is the total gate charge (Qg) for the FDC658AP-G?
The total gate charge (Qg) is 6 to 8.1 nC.
- What package type is the FDC658AP-G available in?
The FDC658AP-G is available in the SUPERSOT-6 package.
- What is the operating and storage junction temperature range for the FDC658AP-G?
The operating and storage junction temperature range is -55 to +150 °C.
