BD682STU
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onsemi BD682STU

Manufacturer No:
BD682STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP DARL 100V 4A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi BD682STU is a PNP Darlington Bipolar Power Transistor designed for high-current applications. It is part of the Darlington transistor family, known for its high DC current gain and monolithic construction. This transistor is particularly suited for use as output devices in complementary general-purpose amplifier applications.

Key Specifications

ParameterValue
Collector-Base Voltage (VCBO)100 V
Emitter-Base Voltage (VEBO)5 V
Maximum DC Collector Current4 A
Maximum Collector Cut-off Current200 μA
DC Current Gain (hFE)750 (Min) @ IC = 1.5 A
Collector-Emitter Saturation Voltage (VCE(sat))2.5 V
Package TypeTO-126-3
Power Dissipation14 W

Key Features

  • High DC current gain (hFE = 750 Min @ IC = 1.5 A)
  • Monolithic construction for reliability and performance
  • PNP Darlington configuration for high-current handling
  • Maximum collector current of 4 A and collector-base voltage of 100 V
  • Available in Pb-Free packages
  • ROHS compliant

Applications

The onsemi BD682STU is suitable for a variety of high-current applications, including:

  • General-purpose amplifier circuits
  • Power switching and control circuits
  • Motor control and driver circuits
  • High-current driver applications in industrial and automotive systems

Q & A

  1. What is the maximum DC collector current of the BD682STU?
    The maximum DC collector current is 4 A.
  2. What is the collector-base voltage (VCBO) of the BD682STU?
    The collector-base voltage (VCBO) is 100 V.
  3. What is the DC current gain (hFE) of the BD682STU?
    The DC current gain (hFE) is 750 (Min) @ IC = 1.5 A.
  4. What is the package type of the BD682STU?
    The package type is TO-126-3.
  5. Is the BD682STU ROHS compliant?
    Yes, the BD682STU is ROHS compliant.
  6. What is the maximum power dissipation of the BD682STU?
    The maximum power dissipation is 14 W.
  7. What is the emitter-base voltage (VEBO) of the BD682STU?
    The emitter-base voltage (VEBO) is 5 V.
  8. What are some common applications of the BD682STU?
    Common applications include general-purpose amplifier circuits, power switching and control circuits, motor control and driver circuits, and high-current driver applications.
  9. Is the BD682STU available in Pb-Free packages?
    Yes, the BD682STU is available in Pb-Free packages.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BD682STU?
    The collector-emitter saturation voltage (VCE(sat)) is 2.5 V.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:14 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD682STU BD681STU
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Active
Transistor Type PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 14 W 40 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

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