Overview
The BD680AS is a PNP Epitaxial Silicon Transistor manufactured by onsemi. It is part of the BD676A/678A/680A/682 series, known for their medium power linear and switching applications. This transistor is designed in a monolithic Darlington configuration, which integrates an antiparallel collector-emitter diode, enhancing its performance in various industrial and power management applications.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | -80 | V |
| Collector-Emitter Voltage (VCEO) | -80 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -4 | A |
| Collector Current (Pulse) (ICP) | -6 | A |
| Base Current (IB) | -100 | mA |
| Collector Dissipation (PC) | 14 | W |
| Thermal Resistance (Junction to Ambient) (Rθja) | 88 | °C/W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 ~ 150 | °C |
| DC Current Gain (hFE) | 750 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -2.8 | V |
| Base-Emitter On Voltage (VBE(on)) | -2.5 | V |
Key Features
- Monolithic Darlington Configuration: The BD680AS features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode, which enhances its switching and linear performance.
- High DC Current Gain: The transistor has a high DC current gain (hFE) of 750, making it suitable for applications requiring high current amplification.
- Good Linearity: It exhibits good hFE linearity, ensuring consistent performance across various operating conditions.
- High Power Handling: With a collector dissipation of 14W and a junction temperature of up to 150°C, it is capable of handling medium power applications efficiently.
- Through-Hole Mounting: The transistor is available in TO-126 packages, suitable for through-hole mounting.
Applications
- Linear and Switching Industrial Equipment: The BD680AS is used in various industrial equipment that require medium power linear and switching capabilities.
- Power Management Systems: It is suitable for power management systems where high current gain and reliability are crucial.
- Complementary Transistor Pairs: It serves as a complement to other transistors in the series, such as BD675A, BD677A, BD679A, and BD681, allowing for balanced circuit designs.
Q & A
- What is the collector-base voltage (VCBO) of the BD680AS transistor?
The collector-base voltage (VCBO) of the BD680AS transistor is -80V.
- What is the maximum collector current (IC) for the BD680AS transistor?
The maximum collector current (IC) for the BD680AS transistor is -4A.
- What is the thermal resistance (Rθja) of the BD680AS transistor?
The thermal resistance (Rθja) of the BD680AS transistor is 88°C/W.
- What is the junction temperature (TJ) limit for the BD680AS transistor?
The junction temperature (TJ) limit for the BD680AS transistor is 150°C.
- What is the DC current gain (hFE) of the BD680AS transistor?
The DC current gain (hFE) of the BD680AS transistor is 750.
- What type of configuration does the BD680AS transistor use?
The BD680AS transistor uses a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD680AS transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BD680AS transistor is -2.8V.
- What is the base-emitter on voltage (VBE(on)) of the BD680AS transistor?
The base-emitter on voltage (VBE(on)) of the BD680AS transistor is -2.5V.
- In what package is the BD680AS transistor available?
The BD680AS transistor is available in TO-126 packages.
- What are some common applications of the BD680AS transistor?
The BD680AS transistor is commonly used in linear and switching industrial equipment, power management systems, and as part of complementary transistor pairs.
