Overview
The BD678AS is a PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for medium power linear and switching applications. It is part of the BD676A/678A/680A/682 series, each with varying voltage and current ratings. The BD678AS is packaged in a TO-126 case, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | -60 | V |
| Collector-Emitter Voltage (VCEO) | -60 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -4 | A |
| Collector Current (Pulse) (ICP) | -6 | A |
| Base Current (IB) | -100 | mA |
| Collector Dissipation (PC) | 14 | W |
| Thermal Resistance (Junction to Ambient) (Rθja) | 88 | °C/W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 ~ 150 | °C |
| DC Current Gain (hFE) | 750 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -2.8 | V |
| Base-Emitter On Voltage (VBE(on)) | -2.5 | V |
Key Features
- Medium Power Handling: Suitable for medium power linear and switching applications.
- High Current Capability: Can handle up to 4A of collector current and 100mA of base current.
- High Voltage Ratings: Collector-base voltage up to -60V and collector-emitter voltage up to -60V.
- Low Saturation Voltage: Collector-emitter saturation voltage of -2.8V, ensuring efficient operation.
- Complementary Transistors: Complements BD675A, BD677A, BD679A, and BD681 respectively.
- TO-126 Package: Standard TO-126 package for easy integration into various circuits.
Applications
- Medium Power Amplifiers: Suitable for medium power amplifier circuits due to its high current and voltage handling capabilities.
- Switching Circuits: Can be used in switching applications where high current and low saturation voltage are required.
- Automotive and Industrial Control: Often used in automotive and industrial control systems due to its robust specifications.
- Power Supplies: Can be used in power supply circuits to manage high current loads efficiently.
Q & A
- What is the maximum collector current of the BD678AS transistor?
The maximum collector current (IC) is -4A, and the maximum pulse collector current (ICP) is -6A.
- What is the collector-emitter voltage rating of the BD678AS?
The collector-emitter voltage (VCEO) is rated at -60V.
- What is the thermal resistance of the BD678AS transistor?
The thermal resistance (Rθja) is 88°C/W.
- What is the junction temperature limit of the BD678AS transistor?
The junction temperature (TJ) limit is 150°C.
- What is the storage temperature range for the BD678AS transistor?
The storage temperature (TSTG) range is -65°C to 150°C.
- What is the DC current gain (hFE) of the BD678AS transistor?
The DC current gain (hFE) is 750.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD678AS transistor?
The collector-emitter saturation voltage (VCE(sat)) is -2.8V.
- What package type is the BD678AS transistor available in?
The BD678AS transistor is available in the TO-126 package.
- Can the BD678AS transistor be used in life support systems or medical devices?
No, the BD678AS transistor is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- What are some common applications of the BD678AS transistor?
Common applications include medium power amplifiers, switching circuits, automotive and industrial control systems, and power supplies.
