Overview
The BD14010S is a PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for medium power linear and switching applications. It is part of the BD140 series, which includes several variants with different current and voltage ratings. The BD14010S is packaged in a TO-126-3 case, making it suitable for a variety of electronic circuits requiring reliable and efficient transistor performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | -80 | V |
| Collector-Emitter Voltage (VCEO) | -80 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| DC Collector Current (IC) | -1.5 | A |
| Pulse Collector Current (IC) | -3.0 | A |
| Base Current (IB) | -0.5 | A |
| Collector Dissipation (PC) | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = -2 V, IC = -0.5 A | 25 to 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 mA, IB = -50 mA | -0.5 | V |
Key Features
- PNP Epitaxial Silicon Transistor: Suitable for medium power linear and switching applications.
- Complementary Transistor: Complement to BD135, BD137, and BD139 respectively.
- High Current Capability: Maximum DC collector current of 1.5 A and pulse collector current of 3.0 A.
- High Voltage Ratings: Collector-base voltage and collector-emitter voltage of -80 V.
- Low Saturation Voltage: Collector-emitter saturation voltage of -0.5 V at specified conditions.
- Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -55°C to +150°C.
Applications
- Medium Power Linear Applications: Suitable for amplifiers and other linear circuits requiring medium power handling.
- Switching Applications: Used in switching circuits where high current and voltage handling are necessary.
- General Purpose Transistor Circuits: Can be used in various general-purpose transistor applications where PNP configuration is required.
Q & A
- What is the maximum DC collector current of the BD14010S transistor?
The maximum DC collector current is -1.5 A.
- What is the collector-emitter voltage rating of the BD14010S?
The collector-emitter voltage rating is -80 V.
- What is the package type of the BD14010S transistor?
The BD14010S is packaged in a TO-126-3 case.
- What are the typical applications of the BD14010S transistor?
It is used in medium power linear and switching applications.
- What is the junction temperature range of the BD14010S transistor?
The junction temperature range is up to 150°C.
- What is the storage temperature range for the BD14010S transistor?
The storage temperature range is from -55°C to +150°C.
- What is the collector-emitter saturation voltage of the BD14010S transistor?
The collector-emitter saturation voltage is -0.5 V at specified conditions.
- Is the BD14010S transistor suitable for high-frequency applications?
While it can handle medium power, it is not specifically optimized for high-frequency applications.
- Can the BD14010S transistor be used in life support systems or medical devices?
No, it is not authorized for use as a critical component in life support systems or medical devices.
- What is the current gain (hFE) of the BD14010S transistor?
The DC current gain (hFE) ranges from 25 to 250 at VCE = -2 V, IC = -0.5 A.
