Overview
The FDH50N50-F133 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET™ family. This device is based on planar stripe and DMOS technology, designed to reduce on-state resistance and enhance switching performance. It also boasts higher avalanche energy strength, making it suitable for various high-power applications. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 500 | V |
| Continuous Drain Current (ID) at TC = 25°C | 48 | A |
| Continuous Drain Current (ID) at TC = 100°C | 30.8 | A |
| Pulsed Drain Current (IDM) | 180 | A |
| Gate-Source Voltage (VGSS) | ±30 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 24 A | 89 mΩ | mΩ |
| Total Gate Charge (Qg) | 105 nC | nC |
| Reverse Transfer Capacitance (Crss) | 50 pF | pF |
| Thermal Resistance, Junction to Case (RθJC) | 0.2 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 °C/W | °C/W |
Key Features
- Low On-State Resistance: RDS(on) = 89 mΩ (Typ.) at VGS = 10 V, ID = 24 A.
- Low Gate Charge: Total gate charge of 105 nC (Typ.).
- Low Crss: Reverse transfer capacitance of 50 pF (Typ.).
- 100% Avalanche Tested: Ensures robustness against avalanche conditions.
- Improved dv/dt Capability: Enhanced performance in high dv/dt environments.
- Environmental Compliance: Pb-free, halogen-free, and RoHS compliant.
Applications
- Lighting: Suitable for high-power lighting systems.
- Uninterruptible Power Supply (UPS): Used in UPS systems for reliable power backup.
- AC-DC Power Supply: Ideal for power conversion in AC-DC power supplies.
- Power Factor Correction (PFC): Used in PFC circuits to improve power efficiency.
- Flat Panel Display (FPD) TV Power: Applied in power supplies for FPD TVs.
- Electronic Lamp Ballasts: Used in electronic ballasts for lighting control.
Q & A
- What is the maximum drain to source voltage of the FDH50N50-F133 MOSFET?
The maximum drain to source voltage (VDSS) is 500 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 48 A at 25°C and 30.8 A at 100°C.
- What is the typical on-state resistance of the FDH50N50-F133?
The typical on-state resistance (RDS(on)) is 89 mΩ at VGS = 10 V, ID = 24 A.
- What is the total gate charge of the FDH50N50-F133?
The total gate charge (Qg) is 105 nC.
- Is the FDH50N50-F133 environmentally compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What are the typical applications of the FDH50N50-F133 MOSFET?
It is used in lighting, UPS, AC-DC power supplies, PFC, FPD TV power, and electronic lamp ballasts.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 0.2 °C/W.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
- How does the FDH50N50-F133 improve system reliability?
It enhances system reliability by providing better switching performance, higher avalanche energy strength, and improved dv/dt capability.
- What is the reverse recovery time (trr) of the body diode?
The reverse recovery time (trr) of the body diode is 580 ns (Typ.) at VGS = 0 V, IS = 48 A, dI/dt = 100 A/μs.
