BD13816STU
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onsemi BD13816STU

Manufacturer No:
BD13816STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 60V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD13816STU is a medium-power PNP bipolar junction transistor manufactured by onsemi. This transistor is part of the BD136, BD138, and BD140 series, which are designed for use in various electronic applications, particularly in audio amplifiers and drivers. The BD13816STU is complementary to the BD135, BD137, and BD139 NPN transistors, making it suitable for complementary or quasi-complementary circuits. It is a Pb-Free, Halogen Free/BFR Free device and is RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Max/Typ/Min Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1.5 A
Collector Current (Pulse) ICP -3.0 A
Base Current IB -0.5 A
Collector Dissipation PC 12.5 W
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -55 to 150 °C
DC Current Gain (hFE) hFE 100 (Min) / 250 (Max)
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V
Base-Emitter ON Voltage VBE(on) -1 V

Key Features

  • PNP Bipolar Junction Transistor: Designed for medium-power applications.
  • Complementary Transistors: Complementary to BD135, BD137, and BD139 NPN transistors.
  • Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • High Current Capability: Maximum DC collector current of -1.5 A and pulse current of -3.0 A.
  • High Voltage Handling: Maximum collector-emitter voltage of -60 V and collector-base voltage of -60 V.
  • Low Saturation Voltage: Collector-emitter saturation voltage of -0.5 V.
  • High DC Current Gain: Minimum DC current gain (hFE) of 100.
  • Thermal Performance: Maximum junction temperature of 150°C and collector dissipation of 12.5 W.

Applications

  • Audio Amplifiers and Drivers: Suitable for use in audio amplification circuits, including complementary or quasi-complementary configurations.
  • General Purpose Amplification: Can be used in various general-purpose amplification applications requiring medium power handling.
  • Power Switching: Applicable in power switching circuits due to its high current and voltage handling capabilities.

Q & A

  1. What is the maximum collector current of the BD13816STU transistor?

    The maximum DC collector current is -1.5 A, and the maximum pulse collector current is -3.0 A.

  2. What is the maximum collector-emitter voltage of the BD13816STU transistor?

    The maximum collector-emitter voltage is -60 V.

  3. Is the BD13816STU transistor RoHS compliant?
  4. What is the typical DC current gain (hFE) of the BD13816STU transistor?
  5. What is the collector-emitter saturation voltage of the BD13816STU transistor?
  6. What are the typical applications of the BD13816STU transistor?
  7. What is the maximum junction temperature of the BD13816STU transistor?
  8. What is the package type of the BD13816STU transistor?
  9. Is the BD13816STU transistor suitable for high-power applications?
  10. What is the storage temperature range for the BD13816STU transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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In Stock

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Similar Products

Part Number BD13816STU BD13916STU BD1386STU BD13516STU BD13616STU BD13716STU BD13810STU
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Active Active
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 45 V 45 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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