Overview
The BC81716MTF is an NPN epitaxial silicon transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for general-purpose switching and amplifier applications. It is part of the BC817 series, which is known for its high reliability and suitability for various electronic circuits. The BC81716MTF is packaged in a SOT-23-3L case, making it compact and suitable for surface-mount technology (SMT) assembly.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Base Voltage (VCBO) | 50 | V |
Collector-Emitter Voltage (VCEO) | 45 | V |
Emitter-Base Voltage (VEBO) | 5 | V |
Collector Current (IC) | 800 | mA |
Junction Temperature (TJ) | -65 to +150 | °C |
Storage Temperature (TSTG) | -65 to +150 | °C |
Power Dissipation (PD) | 310 | mW |
Thermal Resistance, Junction to Ambient (RθJA) | 403 | °C/W |
DC Current Gain (hFE) at IC = 100 mA | 100 - 250 | |
DC Current Gain (hFE) at IC = 300 mA | 60 - 100 | |
Collector-Emitter Saturation Voltage (VCE(sat)) | 0.7 | V |
Base-Emitter On Voltage (VBE(on)) | 1.2 | V |
Gain Bandwidth Product (fT) | 100 | MHz |
Key Features
- Ideally suited for automatic insertion and SMT assembly due to its SOT-23-3L package.
- Epitaxial planar die construction for high reliability and performance.
- Totally lead-free and fully RoHS compliant, halogen and antimony free, making it an environmentally friendly option.
- Qualified to AEC-Q101 standards for high reliability in automotive applications.
- Suitable for switching and AF amplifier stages, as well as low power output stages.
Applications
The BC81716MTF transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching circuits.
- Audio frequency (AF) amplifier stages.
- Low power output stages.
- Automotive electronics, given its compliance with AEC-Q101 standards.
- Other electronic circuits requiring a reliable and compact NPN transistor.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the BC81716MTF transistor?
The maximum collector-emitter voltage (VCEO) is 45 V. - What is the package type of the BC81716MTF transistor?
The transistor is packaged in a SOT-23-3L case. - What are the typical applications of the BC81716MTF transistor?
The transistor is suitable for general-purpose switching, AF amplifier stages, and low power output stages. - Is the BC81716MTF transistor RoHS compliant?
Yes, the BC81716MTF transistor is totally lead-free and fully RoHS compliant. - What is the maximum junction temperature (TJ) for the BC81716MTF transistor?
The maximum junction temperature (TJ) is 150°C. - What is the power dissipation (PD) of the BC81716MTF transistor?
The power dissipation (PD) is 310 mW. - What is the thermal resistance, junction to ambient (RθJA), for the BC81716MTF transistor?
The thermal resistance, junction to ambient (RθJA), is 403 °C/W. - What are the DC current gain (hFE) ranges for the BC81716MTF transistor?
The DC current gain (hFE) ranges are 100-250 at IC = 100 mA and 60-100 at IC = 300 mA. - Is the BC81716MTF transistor suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications. - What is the gain bandwidth product (fT) of the BC81716MTF transistor?
The gain bandwidth product (fT) is 100 MHz).