BC81716MTF
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Fairchild Semiconductor BC81716MTF

Manufacturer No:
BC81716MTF
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
TRANS NPN 45V 0.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC81716MTF is an NPN epitaxial silicon transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for general-purpose switching and amplifier applications. It is part of the BC817 series, which is known for its high reliability and suitability for various electronic circuits. The BC81716MTF is packaged in a SOT-23-3L case, making it compact and suitable for surface-mount technology (SMT) assembly.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)50V
Collector-Emitter Voltage (VCEO)45V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)800mA
Junction Temperature (TJ)-65 to +150°C
Storage Temperature (TSTG)-65 to +150°C
Power Dissipation (PD)310mW
Thermal Resistance, Junction to Ambient (RθJA)403°C/W
DC Current Gain (hFE) at IC = 100 mA100 - 250
DC Current Gain (hFE) at IC = 300 mA60 - 100
Collector-Emitter Saturation Voltage (VCE(sat))0.7V
Base-Emitter On Voltage (VBE(on))1.2V
Gain Bandwidth Product (fT)100MHz

Key Features

  • Ideally suited for automatic insertion and SMT assembly due to its SOT-23-3L package.
  • Epitaxial planar die construction for high reliability and performance.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, making it an environmentally friendly option.
  • Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • Suitable for switching and AF amplifier stages, as well as low power output stages.

Applications

The BC81716MTF transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • Audio frequency (AF) amplifier stages.
  • Low power output stages.
  • Automotive electronics, given its compliance with AEC-Q101 standards.
  • Other electronic circuits requiring a reliable and compact NPN transistor.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) for the BC81716MTF transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the package type of the BC81716MTF transistor?
    The transistor is packaged in a SOT-23-3L case.
  3. What are the typical applications of the BC81716MTF transistor?
    The transistor is suitable for general-purpose switching, AF amplifier stages, and low power output stages.
  4. Is the BC81716MTF transistor RoHS compliant?
    Yes, the BC81716MTF transistor is totally lead-free and fully RoHS compliant.
  5. What is the maximum junction temperature (TJ) for the BC81716MTF transistor?
    The maximum junction temperature (TJ) is 150°C.
  6. What is the power dissipation (PD) of the BC81716MTF transistor?
    The power dissipation (PD) is 310 mW.
  7. What is the thermal resistance, junction to ambient (RθJA), for the BC81716MTF transistor?
    The thermal resistance, junction to ambient (RθJA), is 403 °C/W.
  8. What are the DC current gain (hFE) ranges for the BC81716MTF transistor?
    The DC current gain (hFE) ranges are 100-250 at IC = 100 mA and 60-100 at IC = 300 mA.
  9. Is the BC81716MTF transistor suitable for automotive applications?
    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.
  10. What is the gain bandwidth product (fT) of the BC81716MTF transistor?
    The gain bandwidth product (fT) is 100 MHz).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 100mA, 1V
Power - Max:310 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BC81716MTF BC81816MTF
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 25 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 310 mW 310 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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