Fairchild Semiconductor BD681S

Manufacturer No:: BD681S
Manufacturer:: Fairchild Semiconductor
Package:: Bulk
Description:: TRANS NPN DARL 100V 4A TO126-3
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Product Introduction

Overview

The BD681S is a Medium Power NPN Darlington Bipolar Power Transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It features a monolithic construction and is part of a series that includes complementary transistors such as BD676, BD678, BD680, and BD682.

Key Specifications

Parameter	Value
Part Number	BD681S
Manufacturer	Fairchild Semiconductor (ON Semiconductor)
Polarity	NPN
Package Type	TO-126-3
V_CE (Max)	100V
I_C (Continuous)	4A
h_FE (Min)	750 @ I_C = 1.5A and 2.0A
V_CE(sat) (Max)	2.5V @ I_C = 2A, I_B = 40mA
V_BE(on)	2.5V @ I_C = 2A
Emitter Cut-off Current (I_EBO)	2mA @ V_EB = 5V, I_C = 0

Key Features

High DC Current Gain (h_FE) of 750 (Min) at I_C = 1.5A and 2.0A
Monolithic construction for reliability and performance
Complementary to BD676, BD678, BD680, and BD682 transistors
Pb-Free packages available
Medium power handling capabilities suitable for linear and switching applications

Applications

The BD681S transistor is suitable for a variety of applications, including:

General-purpose amplifier applications
Medium power linear and switching applications
Output devices in complementary amplifier circuits

Q & A

What is the part number of this transistor?
The part number of this transistor is BD681S.
Who is the manufacturer of the BD681S transistor?
The manufacturer is Fairchild Semiconductor, now part of ON Semiconductor.
What is the polarity of the BD681S transistor?
The polarity is NPN.
What is the maximum collector-emitter voltage (V_CE) for the BD681S?
The maximum V_CE is 100V.
What is the continuous collector current (I_C) rating for the BD681S?
The continuous I_C rating is 4A.
What is the minimum DC current gain (h_FE) for the BD681S?
The minimum h_FE is 750 at I_C = 1.5A and 2.0A.
What is the maximum collector-emitter saturation voltage (V_CE(sat)) for the BD681S?
The maximum V_CE(sat) is 2.5V at I_C = 2A, I_B = 40mA.
What is the base-emitter on voltage (V_BE(on)) for the BD681S?
The V_BE(on) is 2.5V at I_C = 2A.
What are some common applications for the BD681S transistor?
Is the BD681S transistor available in Pb-Free packages?

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Quantity: 1,898

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Similar Products

Part Number	BD681S	BD682S	BD681	BD681G
Manufacturer	Fairchild Semiconductor	onsemi	STMicroelectronics	onsemi
Product Status	Active	Obsolete	Active	Active
Transistor Type	NPN - Darlington	PNP - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	500µA	500µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V	750 @ 1.5A, 3V	750 @ 1.5A, 3V	750 @ 1.5A, 3V
Power - Max	40 W	14 W	40 W	40 W
Frequency - Transition	-	-	-	-
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3	TO-126-3	SOT-32-3	TO-126

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3