BD681
  • Share:

STMicroelectronics BD681

Manufacturer No:
BD681
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 100V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD681 is an NPN power Darlington transistor manufactured by STMicroelectronics. It is designed using planar base island technology with a monolithic Darlington configuration. This transistor is known for its good hFE linearity, high fT frequency, and the presence of an integrated antiparallel collector-emitter diode. These features make it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 4 A
Base Current (IB) 0.1 A
Total Dissipation at Tcase = 25°C (PTOT) 40 W
Maximum Operating Junction Temperature (TJ) 150 °C
Storage Temperature (Tstg) -65 to 150 °C
DC Current Gain (hFE) 750 -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 V
Package TO-225AA, TO-126-3, SOT-32 -
RoHS Compliance Ecopack1 -

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
  • High collector current and collector-emitter voltage ratings
  • Low collector-emitter saturation voltage (VCE(sat))
  • High DC current gain (hFE)
  • RoHS compliant packaging

Applications

The BD681 is suitable for various power management and control applications, including:

  • Power amplifiers and drivers
  • Motor control circuits
  • Switching regulators and power supplies
  • Relay and solenoid drivers
  • General-purpose power switching applications

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BD681 transistor?

    The maximum collector-emitter voltage (VCEO) of the BD681 transistor is 100 V.

  2. What is the maximum collector current (IC) of the BD681 transistor?

    The maximum collector current (IC) of the BD681 transistor is 4 A.

  3. What is the DC current gain (hFE) of the BD681 transistor?

    The DC current gain (hFE) of the BD681 transistor is 750.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the BD681 transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the BD681 transistor is 2.5 V.

  5. What are the available packages for the BD681 transistor?

    The BD681 transistor is available in TO-225AA, TO-126-3, and SOT-32 packages.

  6. Is the BD681 transistor RoHS compliant?

    Yes, the BD681 transistor is RoHS compliant.

  7. What is the maximum operating junction temperature (TJ) of the BD681 transistor?

    The maximum operating junction temperature (TJ) of the BD681 transistor is 150°C.

  8. What is the total dissipation at Tcase = 25°C (PTOT) for the BD681 transistor?

    The total dissipation at Tcase = 25°C (PTOT) for the BD681 transistor is 40 W.

  9. What are some common applications of the BD681 transistor?

    The BD681 transistor is commonly used in power amplifiers, motor control circuits, switching regulators, relay and solenoid drivers, and general-purpose power switching applications.

  10. Does the BD681 transistor have an integrated antiparallel diode?

    Yes, the BD681 transistor has an integrated antiparallel collector-emitter diode.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
0 Remaining View Similar

In Stock

$1.00
510

Please send RFQ , we will respond immediately.

Same Series
BD681G
BD681G
TRANS NPN DARL 100V 4A TO126
BD681
BD681
TRANS NPN DARL 100V 4A SOT32-3
BD675AG
BD675AG
TRANS NPN DARL 45V 4A TO126
BD679G
BD679G
TRANS NPN DARL 80V 4A TO126
BD675
BD675
TRANS NPN DARL 45V 4A TO126
BD675A
BD675A
TRANS NPN DARL 45V 4A TO126
BD675G
BD675G
TRANS NPN DARL 45V 4A TO126
BD677AG
BD677AG
TRANS NPN DARL 60V 4A TO126
BD677G
BD677G
TRANS NPN DARL 60V 4A TO126
BD679AG
BD679AG
TRANS NPN DARL 80V 4A TO126

Similar Products

Part Number BD681 BD681S BD681G BD682 BD680
Manufacturer STMicroelectronics Fairchild Semiconductor onsemi STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126-3 TO-126 SOT-32-3 SOT-32-3

Related Product By Categories

BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BUF420AW
BUF420AW
STMicroelectronics
TRANS NPN 450V 30A TO247-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN