BD681
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STMicroelectronics BD681

Manufacturer No:
BD681
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 100V 4A SOT32-3
Delivery:
Payment:
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Product Introduction

Overview

The BD681 is an NPN power Darlington transistor manufactured by STMicroelectronics. It is designed using planar base island technology with a monolithic Darlington configuration. This transistor is known for its good hFE linearity, high fT frequency, and the presence of an integrated antiparallel collector-emitter diode. These features make it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 4 A
Base Current (IB) 0.1 A
Total Dissipation at Tcase = 25°C (PTOT) 40 W
Maximum Operating Junction Temperature (TJ) 150 °C
Storage Temperature (Tstg) -65 to 150 °C
DC Current Gain (hFE) 750 -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 V
Package TO-225AA, TO-126-3, SOT-32 -
RoHS Compliance Ecopack1 -

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
  • High collector current and collector-emitter voltage ratings
  • Low collector-emitter saturation voltage (VCE(sat))
  • High DC current gain (hFE)
  • RoHS compliant packaging

Applications

The BD681 is suitable for various power management and control applications, including:

  • Power amplifiers and drivers
  • Motor control circuits
  • Switching regulators and power supplies
  • Relay and solenoid drivers
  • General-purpose power switching applications

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BD681 transistor?

    The maximum collector-emitter voltage (VCEO) of the BD681 transistor is 100 V.

  2. What is the maximum collector current (IC) of the BD681 transistor?

    The maximum collector current (IC) of the BD681 transistor is 4 A.

  3. What is the DC current gain (hFE) of the BD681 transistor?

    The DC current gain (hFE) of the BD681 transistor is 750.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the BD681 transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the BD681 transistor is 2.5 V.

  5. What are the available packages for the BD681 transistor?

    The BD681 transistor is available in TO-225AA, TO-126-3, and SOT-32 packages.

  6. Is the BD681 transistor RoHS compliant?

    Yes, the BD681 transistor is RoHS compliant.

  7. What is the maximum operating junction temperature (TJ) of the BD681 transistor?

    The maximum operating junction temperature (TJ) of the BD681 transistor is 150°C.

  8. What is the total dissipation at Tcase = 25°C (PTOT) for the BD681 transistor?

    The total dissipation at Tcase = 25°C (PTOT) for the BD681 transistor is 40 W.

  9. What are some common applications of the BD681 transistor?

    The BD681 transistor is commonly used in power amplifiers, motor control circuits, switching regulators, relay and solenoid drivers, and general-purpose power switching applications.

  10. Does the BD681 transistor have an integrated antiparallel diode?

    Yes, the BD681 transistor has an integrated antiparallel collector-emitter diode.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number BD681 BD681S BD681G BD682 BD680
Manufacturer STMicroelectronics Fairchild Semiconductor onsemi STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126-3 TO-126 SOT-32-3 SOT-32-3

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