Overview
The BD681G is a Medium Power NPN Darlington Bipolar Power Transistor produced by onsemi. It is designed for use as output devices in complementary general-purpose amplifier applications. This transistor is part of a series that includes other models like BD675, BD677, and BD679, which are also available in various packages and configurations.
The BD681G is known for its high DC current gain and monolithic construction, making it suitable for a wide range of applications requiring reliable and robust performance.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 40 | W |
| Maximum Collector-Base Voltage (Vcb) | 100 | V |
| Maximum Collector-Emitter Voltage (Vce) | 100 | V |
| Maximum Emitter-Base Voltage (Veb) | 5 | V |
| Maximum Collector Current (Ic max) | 4 | A |
| Forward Current Transfer Ratio (hFE), MIN | 750 | |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| Package | TO-126 |
Key Features
- High DC Current Gain: The BD681G has a minimum DC current gain (hFE) of 750 at collector currents of 1.5 and 2.0 A, ensuring high amplification efficiency.
- Monolithic Construction: The transistor is built with a monolithic Darlington configuration, which enhances its reliability and performance.
- Complementary Devices: The BD681G has complementary PNP devices such as BD676, BD678, BD680, and BD682, making it versatile for various circuit designs.
- Pb-Free Packages Available: The transistor is available in lead-free packages, complying with RoHS standards.
Applications
The BD681G is designed for use in medium power linear and switching applications. It is particularly suitable for:
- General-purpose amplifier applications.
- Audio and video applications.
- Industrial equipment.
- Linear and switching circuits where high current gain and reliability are required.
Q & A
- What is the polarity of the BD681G transistor?
The BD681G is an NPN transistor.
- What is the maximum collector power dissipation of the BD681G?
The maximum collector power dissipation is 40 W.
- What is the maximum collector-emitter voltage of the BD681G?
The maximum collector-emitter voltage is 100 V.
- What is the minimum forward current transfer ratio (hFE) of the BD681G?
The minimum forward current transfer ratio (hFE) is 750.
- What is the maximum operating junction temperature of the BD681G?
The maximum operating junction temperature is 150 °C.
- In what package is the BD681G available?
The BD681G is available in the TO-126 package.
- Are Pb-free packages available for the BD681G?
- What are some common applications of the BD681G?
The BD681G is commonly used in general-purpose amplifier applications, audio and video applications, and industrial equipment.
- What are the complementary devices for the BD681G?
The complementary PNP devices for the BD681G include BD676, BD678, BD680, and BD682.
- Why is the monolithic Darlington configuration important in the BD681G?
The monolithic Darlington configuration enhances the reliability and performance of the transistor.
