Overview
The BD680G is a medium-power silicon PNP Darlington transistor produced by onsemi. This device is part of a series that includes the BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, and BD682TG. The BD680G is designed for use as an output device in complementary general-purpose amplifier applications.
It features a monolithic construction and is RoHS compliant, making it suitable for a wide range of electronic systems. The transistor is packaged in a TO-225 case, which is Pb-free.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCB | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Device Dissipation @ TC = 25 °C | PD | 40 | W |
| Derate above 25 °C | 0.32 | W/°C | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| DC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc) | hFE | 750 | |
| Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 40 mAdc) | VCE(sat) | 2.8 | Vdc |
| Base-Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) | VBE(on) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BD680G offers a high DC current gain, making it suitable for applications requiring high current amplification.
- Monolithic Construction: The transistor is built with a monolithic construction, ensuring reliability and stability.
- Complementary Devices: The BD680G is part of a series that includes complementary devices, such as the BD675, BD677, BD679, and others, making it versatile for various amplifier configurations.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS standards, ensuring environmental safety and regulatory compliance.
- High Collector Current: The transistor can handle a collector current of up to 4.0 Adc, making it suitable for medium-power applications.
Applications
The BD680G is designed for use in a variety of applications, including:
- General-purpose amplifier circuits: The high DC current gain and medium power handling capabilities make it ideal for general-purpose amplifier applications.
- Complementary amplifier configurations: It can be used in conjunction with its complementary devices to form push-pull amplifier circuits.
- Power switching applications: The transistor's ability to handle high collector currents and voltages makes it suitable for power switching and control applications.
Q & A
- What is the collector-emitter voltage rating of the BD680G?
The collector-emitter voltage rating of the BD680G is 80 Vdc.
- What is the maximum collector current of the BD680G?
The maximum collector current of the BD680G is 4.0 Adc.
- Is the BD680G RoHS compliant?
- What is the thermal resistance, junction-to-case, of the BD680G?
The thermal resistance, junction-to-case, of the BD680G is 3.13 °C/W.
- What is the DC current gain of the BD680G?
The DC current gain of the BD680G is 750 at IC = 2.0 Adc and VCE = 3.0 Vdc.
- What is the collector-emitter saturation voltage of the BD680G?
The collector-emitter saturation voltage of the BD680G is 2.8 Vdc at IC = 2.0 Adc and IB = 40 mAdc.
- What is the base-emitter on voltage of the BD680G?
The base-emitter on voltage of the BD680G is 2.5 Vdc at IC = 2.0 Adc and VCE = 3.0 Vdc.
- What is the operating junction temperature range of the BD680G?
The operating junction temperature range of the BD680G is −55 to +150 °C.
- What package type is the BD680G available in?
The BD680G is available in a TO-225 package.
- Can the BD680G be used in power switching applications?
