BD682S
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onsemi BD682S

Manufacturer No:
BD682S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 4A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD682S is a medium-power PNP Darlington transistor produced by onsemi. This transistor is part of the BD676, BD678, BD680, and BD682 series, which are designed for use as output devices in complementary general-purpose amplifier applications. The BD682S is known for its high DC current gain and monolithic construction, making it suitable for a variety of linear and switching applications.

Key Specifications

ParameterValueUnits
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)100V
Emitter-Base Voltage (VEBO)5V
Collector Current (DC) (IC)4A
Collector Current (Pulse) (ICP)6A
Base Current (IB)100mA
Collector Dissipation (PC)14W
Thermal Resistance (Junction to Ambient) (Rθja)88°C/W
Junction Temperature (TJ)150°C
Storage Temperature (TSTG)-65 to 150°C
DC Current Gain (hFE)750 (Min)
Collector-Emitter Saturation Voltage (VCE(sat))2.5 (Max)V

Key Features

  • High DC current gain with a minimum of 750 at IC = 1.5 A and 2.0 A DC.
  • Monolithic construction for reliability and performance.
  • Pb-Free packages available, making it environmentally friendly.
  • Complementary to other transistors in the series such as BD675, BD677, BD679, and BD681.
  • Equivalent to MJE 700, 701, 702, and 703 for broader compatibility.

Applications

The BD682S is suitable for medium power linear and switching applications. It can be used as an output device in general-purpose amplifier circuits, particularly in complementary amplifier configurations. Other potential applications include power amplifiers, motor control circuits, and other high-current switching applications.

Q & A

  1. What is the collector current rating of the BD682S?
    The collector current (IC) rating of the BD682S is 4 A DC and 6 A for pulse current.
  2. What is the maximum collector-emitter voltage for the BD682S?
    The maximum collector-emitter voltage (VCEO) for the BD682S is 100 V.
  3. What is the DC current gain of the BD682S?
    The DC current gain (hFE) of the BD682S is a minimum of 750 at IC = 1.5 A and 2.0 A DC.
  4. Is the BD682S Pb-Free?
    Yes, Pb-Free packages are available for the BD682S.
  5. What is the thermal resistance of the BD682S?
    The thermal resistance (Rθja) of the BD682S is 88 °C/W.
  6. What is the maximum junction temperature for the BD682S?
    The maximum junction temperature (TJ) for the BD682S is 150 °C.
  7. What are the storage temperature limits for the BD682S?
    The storage temperature (TSTG) limits for the BD682S are -65 to 150 °C.
  8. Is the BD682S still in production?
    No, the BD682S is listed as obsolete and is no longer in production.
  9. What are some complementary transistors to the BD682S?
    The BD682S is complementary to transistors such as BD675, BD677, BD679, and BD681.
  10. What are some equivalent transistors to the BD682S?
    The BD682S is equivalent to MJE 700, 701, 702, and 703).

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:14 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Same Series
BD682S
BD682S
TRANS PNP DARL 100V 4A TO126-3
BD680G
BD680G
TRANS PNP DARL 80V 4A TO126
BD676AG
BD676AG
TRANS PNP DARL 45V 4A TO126
BD682T
BD682T
TRANS PNP DARL 100V 4A TO126
BD682G
BD682G
TRANS PNP DARL 100V 4A TO126
BD680AG
BD680AG
TRANS PNP DARL 80V 4A TO126
BD676
BD676
TRANS PNP DARL 45V 4A TO126
BD676A
BD676A
TRANS PNP DARL 45V 4A TO126
BD676G
BD676G
TRANS PNP DARL 45V 4A TO126
BD678AG
BD678AG
TRANS PNP DARL 60V 4A TO126
BD678G
BD678G
TRANS PNP DARL 60V 4A TO126
BD682TG
BD682TG
TRANS PNP DARL 100V 4A TO126

Similar Products

Part Number BD682S BD682T BD681S BD682 BD682G
Manufacturer onsemi onsemi Fairchild Semiconductor STMicroelectronics onsemi
Product Status Obsolete Obsolete Active Active Active
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 14 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126 TO-126-3 SOT-32-3 TO-126

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