BD682S
  • Share:

onsemi BD682S

Manufacturer No:
BD682S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 4A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD682S is a medium-power PNP Darlington transistor produced by onsemi. This transistor is part of the BD676, BD678, BD680, and BD682 series, which are designed for use as output devices in complementary general-purpose amplifier applications. The BD682S is known for its high DC current gain and monolithic construction, making it suitable for a variety of linear and switching applications.

Key Specifications

ParameterValueUnits
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)100V
Emitter-Base Voltage (VEBO)5V
Collector Current (DC) (IC)4A
Collector Current (Pulse) (ICP)6A
Base Current (IB)100mA
Collector Dissipation (PC)14W
Thermal Resistance (Junction to Ambient) (Rθja)88°C/W
Junction Temperature (TJ)150°C
Storage Temperature (TSTG)-65 to 150°C
DC Current Gain (hFE)750 (Min)
Collector-Emitter Saturation Voltage (VCE(sat))2.5 (Max)V

Key Features

  • High DC current gain with a minimum of 750 at IC = 1.5 A and 2.0 A DC.
  • Monolithic construction for reliability and performance.
  • Pb-Free packages available, making it environmentally friendly.
  • Complementary to other transistors in the series such as BD675, BD677, BD679, and BD681.
  • Equivalent to MJE 700, 701, 702, and 703 for broader compatibility.

Applications

The BD682S is suitable for medium power linear and switching applications. It can be used as an output device in general-purpose amplifier circuits, particularly in complementary amplifier configurations. Other potential applications include power amplifiers, motor control circuits, and other high-current switching applications.

Q & A

  1. What is the collector current rating of the BD682S?
    The collector current (IC) rating of the BD682S is 4 A DC and 6 A for pulse current.
  2. What is the maximum collector-emitter voltage for the BD682S?
    The maximum collector-emitter voltage (VCEO) for the BD682S is 100 V.
  3. What is the DC current gain of the BD682S?
    The DC current gain (hFE) of the BD682S is a minimum of 750 at IC = 1.5 A and 2.0 A DC.
  4. Is the BD682S Pb-Free?
    Yes, Pb-Free packages are available for the BD682S.
  5. What is the thermal resistance of the BD682S?
    The thermal resistance (Rθja) of the BD682S is 88 °C/W.
  6. What is the maximum junction temperature for the BD682S?
    The maximum junction temperature (TJ) for the BD682S is 150 °C.
  7. What are the storage temperature limits for the BD682S?
    The storage temperature (TSTG) limits for the BD682S are -65 to 150 °C.
  8. Is the BD682S still in production?
    No, the BD682S is listed as obsolete and is no longer in production.
  9. What are some complementary transistors to the BD682S?
    The BD682S is complementary to transistors such as BD675, BD677, BD679, and BD681.
  10. What are some equivalent transistors to the BD682S?
    The BD682S is equivalent to MJE 700, 701, 702, and 703).

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:14 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
0 Remaining View Similar

In Stock

$0.66
151

Please send RFQ , we will respond immediately.

Same Series
BD682S
BD682S
TRANS PNP DARL 100V 4A TO126-3
BD680G
BD680G
TRANS PNP DARL 80V 4A TO126
BD676AG
BD676AG
TRANS PNP DARL 45V 4A TO126
BD682T
BD682T
TRANS PNP DARL 100V 4A TO126
BD682G
BD682G
TRANS PNP DARL 100V 4A TO126
BD680AG
BD680AG
TRANS PNP DARL 80V 4A TO126
BD676
BD676
TRANS PNP DARL 45V 4A TO126
BD676A
BD676A
TRANS PNP DARL 45V 4A TO126
BD676G
BD676G
TRANS PNP DARL 45V 4A TO126
BD678AG
BD678AG
TRANS PNP DARL 60V 4A TO126
BD678G
BD678G
TRANS PNP DARL 60V 4A TO126
BD682TG
BD682TG
TRANS PNP DARL 100V 4A TO126

Similar Products

Part Number BD682S BD682T BD681S BD682 BD682G
Manufacturer onsemi onsemi Fairchild Semiconductor STMicroelectronics onsemi
Product Status Obsolete Obsolete Active Active Active
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 14 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126 TO-126-3 SOT-32-3 TO-126

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223