Overview
The BD682S is a medium-power PNP Darlington transistor produced by onsemi. This transistor is part of the BD676, BD678, BD680, and BD682 series, which are designed for use as output devices in complementary general-purpose amplifier applications. The BD682S is known for its high DC current gain and monolithic construction, making it suitable for a variety of linear and switching applications.
Key Specifications
Parameter | Value | Units |
---|---|---|
Collector-Base Voltage (VCBO) | 100 | V |
Collector-Emitter Voltage (VCEO) | 100 | V |
Emitter-Base Voltage (VEBO) | 5 | V |
Collector Current (DC) (IC) | 4 | A |
Collector Current (Pulse) (ICP) | 6 | A |
Base Current (IB) | 100 | mA |
Collector Dissipation (PC) | 14 | W |
Thermal Resistance (Junction to Ambient) (Rθja) | 88 | °C/W |
Junction Temperature (TJ) | 150 | °C |
Storage Temperature (TSTG) | -65 to 150 | °C |
DC Current Gain (hFE) | 750 (Min) | |
Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 (Max) | V |
Key Features
- High DC current gain with a minimum of 750 at IC = 1.5 A and 2.0 A DC.
- Monolithic construction for reliability and performance.
- Pb-Free packages available, making it environmentally friendly.
- Complementary to other transistors in the series such as BD675, BD677, BD679, and BD681.
- Equivalent to MJE 700, 701, 702, and 703 for broader compatibility.
Applications
The BD682S is suitable for medium power linear and switching applications. It can be used as an output device in general-purpose amplifier circuits, particularly in complementary amplifier configurations. Other potential applications include power amplifiers, motor control circuits, and other high-current switching applications.
Q & A
- What is the collector current rating of the BD682S?
The collector current (IC) rating of the BD682S is 4 A DC and 6 A for pulse current. - What is the maximum collector-emitter voltage for the BD682S?
The maximum collector-emitter voltage (VCEO) for the BD682S is 100 V. - What is the DC current gain of the BD682S?
The DC current gain (hFE) of the BD682S is a minimum of 750 at IC = 1.5 A and 2.0 A DC. - Is the BD682S Pb-Free?
Yes, Pb-Free packages are available for the BD682S. - What is the thermal resistance of the BD682S?
The thermal resistance (Rθja) of the BD682S is 88 °C/W. - What is the maximum junction temperature for the BD682S?
The maximum junction temperature (TJ) for the BD682S is 150 °C. - What are the storage temperature limits for the BD682S?
The storage temperature (TSTG) limits for the BD682S are -65 to 150 °C. - Is the BD682S still in production?
No, the BD682S is listed as obsolete and is no longer in production. - What are some complementary transistors to the BD682S?
The BD682S is complementary to transistors such as BD675, BD677, BD679, and BD681. - What are some equivalent transistors to the BD682S?
The BD682S is equivalent to MJE 700, 701, 702, and 703).