Overview
The BD678G is a plastic, medium-power silicon PNP Darlington transistor produced by onsemi. This transistor is designed for use as an output device in complementary general-purpose amplifier applications. It is part of a series that includes other models such as BD676G, BD676AG, BD680G, and BD680AG, among others. The BD678G is known for its high DC current gain and monolithic construction, making it suitable for a variety of electronic circuits.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCB | 60 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Device Dissipation | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| DC Current Gain (hFE) | hFE | 750 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 2.5 | Vdc |
| Base-Emitter On Voltage (VBE(on)) | VBE(on) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BD678G offers a high DC current gain, making it efficient for amplifier applications.
- Monolithic Construction: The transistor is built with a monolithic construction, enhancing its reliability and performance.
- Complementary Devices: The BD678G is part of a series that includes complementary devices such as BD675, BD677, and others, making it versatile for various circuit designs.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental safety.
- High Collector-Emitter Voltage: With a maximum collector-emitter voltage of 60V, the transistor can handle high voltage applications.
Applications
The BD678G is suitable for a variety of applications, including:
- General-Purpose Amplifiers: It can be used as an output device in complementary general-purpose amplifier applications.
- Power Amplifiers: Its high current gain and power handling capabilities make it suitable for power amplifier circuits.
- Switching Circuits: The transistor can be used in switching circuits due to its high current handling and low saturation voltage.
Q & A
- What is the maximum collector-emitter voltage of the BD678G?
The maximum collector-emitter voltage (VCEO) of the BD678G is 60 Vdc.
- What is the maximum collector current of the BD678G?
The maximum collector current (IC) of the BD678G is 4.0 Adc.
- Is the BD678G Pb-Free and RoHS compliant?
- What is the thermal resistance, junction-to-case (RJC) of the BD678G?
The thermal resistance, junction-to-case (RJC) of the BD678G is 3.13 °C/W.
- What is the operating and storage junction temperature range of the BD678G?
The operating and storage junction temperature range of the BD678G is −55 to +150 °C.
- What is the DC current gain (hFE) of the BD678G?
The DC current gain (hFE) of the BD678G is 750.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD678G?
The collector-emitter saturation voltage (VCE(sat)) of the BD678G is 2.5 Vdc.
- What is the base-emitter on voltage (VBE(on)) of the BD678G?
The base-emitter on voltage (VBE(on)) of the BD678G is 2.5 Vdc.
- In what type of packages is the BD678G available?
The BD678G is available in a TO-225 package.
- What are some common applications of the BD678G?
The BD678G is commonly used in general-purpose amplifiers, power amplifiers, and switching circuits.
