BD678
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STMicroelectronics BD678

Manufacturer No:
BD678
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP DARL 60V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD678 is a PNP power Darlington transistor manufactured by STMicroelectronics. It is part of the BD6xxx series, which includes both NPN and PNP polarity transistors. These devices are produced using planar base island technology with a monolithic Darlington configuration, incorporating an integrated antiparallel collector-emitter diode. This design enhances the transistor's performance in various applications, particularly in linear and switching industrial equipment.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)60V
Collector-Emitter Voltage (VCEO)60V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)4A
Collector Peak Current (ICM)6A
Base Current (IB)0.1A
Total Dissipation at Tcase = 25°C (PTOT)40W
Maximum Operating Junction Temperature (TJ)150°C
Storage Temperature (Tstg)-65 to 150°C
Collector-Emitter Saturation Voltage (VCE(sat))2.5 (IC = 1.5 A, IB = 30 mA)V
DC Current Gain (hFE)750 (IC = 1.5 A, VCE = 3 V)
PackageSOT-32
RoHS ComplianceEcopack1

Key Features

  • Good hFE linearity
  • High fT frequency
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Manufactured in planar base island technology
  • ECOPACK® packages for environmental compliance

Applications

The BD678 is suitable for various applications, including:

  • Linear and switching industrial equipment
  • Fast electronic switches
  • Non-inductive resistors

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD678 transistor?
    The collector-emitter voltage (VCEO) of the BD678 transistor is 60 V.
  2. What is the maximum collector current (IC) for the BD678?
    The maximum collector current (IC) for the BD678 is 4 A.
  3. What is the maximum operating junction temperature (TJ) for the BD678?
    The maximum operating junction temperature (TJ) for the BD678 is 150 °C.
  4. What package type is the BD678 available in?
    The BD678 is available in the SOT-32 package.
  5. Is the BD678 RoHS compliant?
    Yes, the BD678 is RoHS compliant with an Ecopack1 rating.
  6. What is the DC current gain (hFE) of the BD678?
    The DC current gain (hFE) of the BD678 is 750 at IC = 1.5 A and VCE = 3 V.
  7. What are the typical applications of the BD678 transistor?
    The BD678 transistor is typically used in linear and switching industrial equipment, fast electronic switches, and as non-inductive resistors.
  8. What technology is used to manufacture the BD678?
    The BD678 is manufactured using planar base island technology with a monolithic Darlington configuration.
  9. Does the BD678 have an integrated diode?
    Yes, the BD678 has an integrated antiparallel collector-emitter diode.
  10. What is the storage temperature range for the BD678?
    The storage temperature range for the BD678 is -65 to 150 °C.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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BD680A
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BD678
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Similar Products

Part Number BD678 BD679 BD678A BD678G BD675 BD676 BD677
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Active
Transistor Type PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32-3 SOT-32-3 TO-126 TO-126 TO-126 SOT-32-3

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