BD679A
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STMicroelectronics BD679A

Manufacturer No:
BD679A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 80V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD679A is an NPN power Darlington transistor manufactured by STMicroelectronics. It is part of the BD6xxx series, which features complementary power Darlington transistors. The BD679A is designed with a monolithic Darlington configuration and includes an integrated antiparallel collector-emitter diode. This transistor is known for its good hFE linearity and high fT frequency, making it suitable for a variety of applications in linear and switching industrial equipment.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)80V
Maximum DC Collector Current4A
Maximum Collector Cut-off Current200 uA
Power Dissipation (Pd)40W
Collector-Emitter Saturation Voltage (VCE(sat))2.8V
Base-Emitter Voltage (VBE)2.5V
DC Current Gain (hFE)750 (Typ.)
Maximum Operating Junction Temperature150°C
Storage Temperature-65 to 150°C

Key Features

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
  • Good hFE linearity and high fT frequency.
  • High collector current capability up to 4 A.
  • High power dissipation of up to 40 W.
  • Wide operating temperature range from -65°C to 150°C.

Applications

The BD679A is primarily used in linear and switching industrial equipment. Its high current gain and low saturation voltage make it suitable for applications such as motor control, power supplies, and other high-current switching applications. Additionally, it can be used in various industrial automation and control systems where high reliability and performance are required.

Q & A

  1. What is the BD679A transistor?
    The BD679A is an NPN power Darlington transistor manufactured by STMicroelectronics, featuring a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
  2. What is the maximum collector current of the BD679A?
    The maximum DC collector current of the BD679A is 4 A.
  3. What is the power dissipation capability of the BD679A?
    The power dissipation (Pd) of the BD679A is up to 40 W.
  4. What are the key features of the BD679A?
    The BD679A features good hFE linearity, high fT frequency, and a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
  5. What are the typical applications of the BD679A?
    The BD679A is used in linear and switching industrial equipment, such as motor control, power supplies, and other high-current switching applications.
  6. What is the maximum operating junction temperature of the BD679A?
    The maximum operating junction temperature of the BD679A is 150°C.
  7. What is the storage temperature range for the BD679A?
    The storage temperature range for the BD679A is from -65°C to 150°C.
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the BD679A?
    The collector-emitter saturation voltage (VCE(sat)) of the BD679A is typically 2.8 V.
  9. What is the DC current gain (hFE) of the BD679A?
    The DC current gain (hFE) of the BD679A is typically 750.
  10. Is the BD679A available in lead-free packaging?
    Yes, the BD679A is available in ECOPACK® packages, which are lead-free and comply with JEDEC Standard JESD97.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number BD679A BD679AS BD679G BD679AG BD675A BD676A BD677A BD678A BD679
Manufacturer STMicroelectronics onsemi onsemi onsemi onsemi onsemi STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Active Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 45 V 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126-3 TO-126 TO-126 TO-126 TO-126 SOT-32-3 SOT-32-3 SOT-32-3

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