BD677A
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STMicroelectronics BD677A

Manufacturer No:
BD677A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 60V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677A is an NPN power Darlington transistor manufactured by STMicroelectronics. It is part of the BD6xxx series of complementary power Darlington transistors. These devices are produced using planar base island technology and feature a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. This design enhances the transistor's performance in various applications, particularly in linear and switching industrial equipment.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 60 V
Collector-Emitter Voltage (VCEO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Collector Peak Current (ICM) 6 A
Base Current (IB) 0.1 A
Total Dissipation at Tcase = 25°C (PTOT) 40 W
Storage Temperature (Tstg) -65 to 150 °C
Maximum Operating Junction Temperature (TJ) 150 °C
DC Current Gain (hFE) 750 -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 V
Base-Emitter Voltage (VBE) 2.5 V

Key Features

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Good hFE linearity
  • High fT frequency
  • Manufactured in planar base island technology
  • Available in ECOPACK® packages, which are lead-free and compliant with environmental standards

Applications

The BD677A is suitable for various applications, including:

  • Linear and switching industrial equipment
  • Power amplifiers and drivers
  • Motor control and power supplies
  • Other high-current and high-voltage applications requiring reliable and efficient transistor performance

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD677A?

    The collector-emitter voltage (VCEO) of the BD677A is 60 V.

  2. What is the maximum collector current (IC) of the BD677A?

    The maximum collector current (IC) of the BD677A is 4 A.

  3. What is the DC current gain (hFE) of the BD677A?

    The DC current gain (hFE) of the BD677A is 750.

  4. What is the maximum operating junction temperature (TJ) of the BD677A?

    The maximum operating junction temperature (TJ) of the BD677A is 150°C.

  5. What type of package does the BD677A come in?

    The BD677A comes in an SOT-32 package and is available in ECOPACK® lead-free packaging.

  6. What are the typical applications of the BD677A?

    The BD677A is typically used in linear and switching industrial equipment, power amplifiers, motor control, and other high-current and high-voltage applications.

  7. Does the BD677A have an integrated antiparallel collector-emitter diode?
  8. What is the storage temperature range for the BD677A?

    The storage temperature range for the BD677A is -65°C to 150°C.

  9. Is the BD677A RoHS compliant?
  10. What is the total dissipation at Tcase = 25°C (PTOT) for the BD677A?

    The total dissipation at Tcase = 25°C (PTOT) for the BD677A is 40 W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number BD677A BD679A BD677AS BD678A BD677AG BD677G BD675A BD676A BD677
Manufacturer STMicroelectronics STMicroelectronics Fairchild Semiconductor STMicroelectronics onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 60 V 60 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32-3 TO-126-3 SOT-32-3 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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