BD677A
  • Share:

STMicroelectronics BD677A

Manufacturer No:
BD677A
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 60V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677A is an NPN power Darlington transistor manufactured by STMicroelectronics. It is part of the BD6xxx series of complementary power Darlington transistors. These devices are produced using planar base island technology and feature a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. This design enhances the transistor's performance in various applications, particularly in linear and switching industrial equipment.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 60 V
Collector-Emitter Voltage (VCEO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Collector Peak Current (ICM) 6 A
Base Current (IB) 0.1 A
Total Dissipation at Tcase = 25°C (PTOT) 40 W
Storage Temperature (Tstg) -65 to 150 °C
Maximum Operating Junction Temperature (TJ) 150 °C
DC Current Gain (hFE) 750 -
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 V
Base-Emitter Voltage (VBE) 2.5 V

Key Features

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Good hFE linearity
  • High fT frequency
  • Manufactured in planar base island technology
  • Available in ECOPACK® packages, which are lead-free and compliant with environmental standards

Applications

The BD677A is suitable for various applications, including:

  • Linear and switching industrial equipment
  • Power amplifiers and drivers
  • Motor control and power supplies
  • Other high-current and high-voltage applications requiring reliable and efficient transistor performance

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD677A?

    The collector-emitter voltage (VCEO) of the BD677A is 60 V.

  2. What is the maximum collector current (IC) of the BD677A?

    The maximum collector current (IC) of the BD677A is 4 A.

  3. What is the DC current gain (hFE) of the BD677A?

    The DC current gain (hFE) of the BD677A is 750.

  4. What is the maximum operating junction temperature (TJ) of the BD677A?

    The maximum operating junction temperature (TJ) of the BD677A is 150°C.

  5. What type of package does the BD677A come in?

    The BD677A comes in an SOT-32 package and is available in ECOPACK® lead-free packaging.

  6. What are the typical applications of the BD677A?

    The BD677A is typically used in linear and switching industrial equipment, power amplifiers, motor control, and other high-current and high-voltage applications.

  7. Does the BD677A have an integrated antiparallel collector-emitter diode?
  8. What is the storage temperature range for the BD677A?

    The storage temperature range for the BD677A is -65°C to 150°C.

  9. Is the BD677A RoHS compliant?
  10. What is the total dissipation at Tcase = 25°C (PTOT) for the BD677A?

    The total dissipation at Tcase = 25°C (PTOT) for the BD677A is 40 W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
0 Remaining View Similar

In Stock

$1.36
247

Please send RFQ , we will respond immediately.

Same Series
BD679A
BD679A
TRANS NPN DARL 80V 4A SOT32-3
BD677A
BD677A
TRANS NPN DARL 60V 4A SOT32-3
BD677
BD677
TRANS NPN DARL 60V 4A SOT32-3
BD680A
BD680A
TRANS PNP DARL 80V 4A SOT32-3
BD678
BD678
TRANS PNP DARL 60V 4A SOT32-3
BD678A
BD678A
TRANS PNP DARL 60V 4A SOT32-3

Similar Products

Part Number BD677A BD679A BD677AS BD678A BD677AG BD677G BD675A BD676A BD677
Manufacturer STMicroelectronics STMicroelectronics Fairchild Semiconductor STMicroelectronics onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 60 V 60 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32-3 TO-126-3 SOT-32-3 TO-126 TO-126 TO-126 TO-126 SOT-32-3

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN