BD677
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STMicroelectronics BD677

Manufacturer No:
BD677
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 60V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677 is a high-performance NPN Darlington transistor manufactured by STMicroelectronics. It is part of the BD6xxx series of complementary power Darlington transistors. This device is designed for use in linear and switching industrial equipment, leveraging its monolithic Darlington configuration and integrated antiparallel collector-emitter diode. The BD677 is known for its good hFE linearity, high fT frequency, and robust electrical characteristics, making it a reliable choice for various industrial applications.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)60V
Collector-Emitter Voltage (VCEO)60V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)4A
Collector Peak Current (ICM)6A
Base Current (IB)0.1A
Total Dissipation at Tcase = 25°C (PTOT)40W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (TJ)150°C
DC Current Gain (hFE)750
Collector-Emitter Saturation Voltage (VCE(sat))2.5V
Base-Emitter Voltage (VBE)2.5V

Key Features

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
  • Good hFE linearity and high fT frequency.
  • High collector current and peak current capabilities.
  • Robust electrical characteristics suitable for linear and switching applications.
  • Manufactured in planar base island technology.
  • Available in ECOPACK® packages with lead-free second level interconnect.

Applications

The BD677 is designed for use in various industrial applications, including:

  • Linear and switching industrial equipment.
  • Power amplifiers and drivers.
  • Motor control systems.
  • Relay and solenoid drivers.
  • General-purpose power switching.

Q & A

  1. What is the BD677 transistor?
    The BD677 is an NPN Darlington transistor manufactured by STMicroelectronics, designed for linear and switching industrial applications.
  2. What is the maximum collector-emitter voltage of the BD677?
    The maximum collector-emitter voltage (VCEO) of the BD677 is 60 V.
  3. What is the maximum collector current of the BD677?
    The maximum collector current (IC) of the BD677 is 4 A.
  4. What is the DC current gain (hFE) of the BD677?
    The DC current gain (hFE) of the BD677 is 750.
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BD677?
    The collector-emitter saturation voltage (VCE(sat)) of the BD677 is 2.5 V.
  6. What is the base-emitter voltage (VBE) of the BD677?
    The base-emitter voltage (VBE) of the BD677 is 2.5 V.
  7. What type of package does the BD677 come in?
    The BD677 comes in a SOT-32 package with ECOPACK® lead-free second level interconnect.
  8. What are the typical applications of the BD677?
    The BD677 is typically used in linear and switching industrial equipment, power amplifiers, motor control systems, relay and solenoid drivers, and general-purpose power switching.
  9. What is the maximum operating junction temperature of the BD677?
    The maximum operating junction temperature (TJ) of the BD677 is 150 °C.
  10. What is the storage temperature range for the BD677?
    The storage temperature range (Tstg) for the BD677 is -65 to 150 °C.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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BD682
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BD677A
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BD677
BD677
TRANS NPN DARL 60V 4A SOT32-3
BD678
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TRANS PNP DARL 60V 4A SOT32-3
BD678A
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Similar Products

Part Number BD677 BD679 BD677A BD678 BD677G BD675 BD676
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 60 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32-3 SOT-32-3 SOT-32-3 TO-126 TO-126 TO-126

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