Overview
The BD682TG is a medium-power PNP Darlington transistor produced by onsemi. This transistor is part of a series that includes the BD676, BD678, and BD680 models, all of which are designed for use as output devices in complementary general-purpose amplifier applications. The BD682TG is known for its high DC current gain and monolithic construction, making it suitable for a variety of power amplification tasks.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Device Dissipation @ TC = 25 °C | PD | 40 | W |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 750 (Min) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BD682TG has a minimum DC current gain (hFE) of 750, making it highly efficient for amplification tasks.
- Monolithic Construction: The transistor is built with a monolithic structure, ensuring reliability and stability.
- Complementary Devices: The BD682TG is part of a series that includes complementary devices such as BD675, BD677, BD679, and others, allowing for versatile application designs.
- Pb-Free Packages: The transistor is available in Pb-Free packages, making it RoHS compliant and environmentally friendly.
- High Collector Current: The transistor can handle a collector current of up to 4.0 Adc.
Applications
The BD682TG is suitable for various applications, including:
- General-Purpose Amplifiers: It can be used as an output device in complementary amplifier circuits.
- Power Amplification: Its high DC current gain and collector current make it ideal for power amplification tasks.
- Automotive and Industrial Systems: The transistor's robust specifications and reliability make it a good choice for automotive and industrial applications.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BD682TG?
The maximum collector-emitter voltage (VCEO) of the BD682TG is 100 Vdc. - What is the minimum DC current gain (hFE) of the BD682TG?
The minimum DC current gain (hFE) of the BD682TG is 750. - What is the maximum collector current (IC) of the BD682TG?
The maximum collector current (IC) of the BD682TG is 4.0 Adc. - Is the BD682TG RoHS compliant?
Yes, the BD682TG is available in Pb-Free packages and is RoHS compliant. - What is the thermal resistance, junction-to-case (RJC) of the BD682TG?
The thermal resistance, junction-to-case (RJC) of the BD682TG is 3.13 °C/W. - What is the operating and storage junction temperature range of the BD682TG?
The operating and storage junction temperature range of the BD682TG is −55 to +150 °C. - Can the BD682TG be used in high-power amplification applications?
Yes, the BD682TG is suitable for high-power amplification applications due to its high DC current gain and collector current. - Is the BD682TG part of a series with complementary devices?
Yes, the BD682TG is part of a series that includes complementary devices such as BD675, BD677, BD679, and others. - What is the collector-emitter saturation voltage (VCE(sat)) of the BD682TG?
The collector-emitter saturation voltage (VCE(sat)) of the BD682TG is 2.5 Vdc. - What package type is the BD682TG available in?
The BD682TG is available in the TO-225 package type.
