Overview
The MAT01AH is a monolithic dual NPN transistor produced by Analog Devices Inc. This component is distinguished by its excellent stability of critical parameters over both temperature and time, thanks to an exclusive Silicon Nitride 'Triple-Passivation' process. The MAT01AH is designed to provide high performance in various low-noise and low-power applications, making it ideal for use in low-level input stages.
Key Specifications
| Parameter | Symbol | Test Conditions/Comments | Unit | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Offset Voltage | VOS | VCB = 15 V, IC = 10 µA, −55°C ≤ TA ≤ +125°C | mV | 0.06 | 0.15 | 0.14 |
| Average Offset Voltage Drift | TCVOS | −55°C ≤ TA ≤ +125°C | µV/°C | 0.15 | 0.50 | 0.35 |
| Offset Current | IOS | −55°C ≤ TA ≤ +125°C | nA | 0.9 | 8.0 | 1.5 |
| Average Offset Current Drift | TCIOS | −55°C ≤ TA ≤ +125°C | pA/°C | 10 | 90 | 15 |
| Bias Current | IB | −55°C ≤ TA ≤ +125°C | nA | 28 | 60 | 36 |
| Current Gain | hFE | −55°C ≤ TA ≤ +125°C | 167 | 400 | 77 | |
| Collector to Base Leakage Current | ICBO | TA = 125°C, VCB = 30 V, IE = 0 | nA | 15 | 80 | 25 |
| Collector to Emitter Leakage Current | ICES | TA = 125°C, VCB = 30 V, IE = 0 | nA | 15 | 80 | 25 |
Key Features
- Low Offset Voltage (VOS): 40 µV typical, 100 µV maximum.
- Low Temperature Coefficient of Offset Voltage (TCVOS): 0.5 µV/°C maximum.
- High Current Gain (hFE): 500 minimum, with excellent hFE linearity from 10 nA to 10 mA.
- Low Noise Voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz.
- High Breakdown Voltage: 45 V minimum.
- Stability Over Temperature and Time: Ensured by the exclusive Silicon Nitride 'Triple-Passivation' process.
Applications
- Weigh scales
- Low noise, op amp front end
- Current mirror and current sink/source
- Low noise instrumentation amplifiers
- Voltage controlled attenuators
- Log amplifiers
Q & A
- What is the typical offset voltage of the MAT01AH?
The typical offset voltage (VOS) of the MAT01AH is 40 µV, with a maximum of 100 µV.
- What is the temperature coefficient of offset voltage for the MAT01AH?
The temperature coefficient of offset voltage (TCVOS) is 0.5 µV/°C maximum.
- What is the minimum current gain (hFE) of the MAT01AH?
The minimum current gain (hFE) of the MAT01AH is 500.
- What is the noise voltage specification of the MAT01AH?
The noise voltage of the MAT01AH is 0.23 µV p-p from 0.1 Hz to 10 Hz.
- What is the breakdown voltage of the MAT01AH?
The breakdown voltage of the MAT01AH is 45 V minimum.
- What is the package type of the MAT01AH?
The MAT01AH is available in a 6-Lead TO-78 package.
- What are some common applications of the MAT01AH?
Common applications include weigh scales, low noise op amp front ends, current mirrors and current sink/sources, low noise instrumentation amplifiers, voltage controlled attenuators, and log amplifiers.
- What process ensures the stability of the MAT01AH over temperature and time?
The stability is ensured by the exclusive Silicon Nitride 'Triple-Passivation' process.
- How does the MAT01AH perform in low-power, low-level input stages?
The MAT01AH performs exceptionally well in low-power, low-level input stages due to its high gain at low collector currents, including an exceptional hFE of 590 at a collector current of only 10 nA.
- Where can I find detailed documentation and technical support for the MAT01AH?
Detailed documentation and technical support can be found on the Analog Devices website, including data sheets and application notes.
