Overview
The MAT01GHZ is a monolithic dual NPN transistor produced by Analog Devices Inc. This component utilizes an exclusive Silicon Nitride 'Triple-Passivation' process, which ensures excellent stability of critical parameters over both temperature and time. The MAT01GHZ is designed to provide high performance and reliability, making it suitable for a variety of applications requiring low noise and high gain.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Offset Voltage (VOS) | 40 µV (typ), 100 µV (max) | µV |
| Temperature Coefficient of Offset Voltage (TCVOS) | 0.5 µV/°C (max) | µV/°C |
| Current Gain (hFE) | 500 (min) | - |
| Noise Voltage | 0.23 µV p-p from 0.1 Hz to 10 Hz | µV p-p |
| Breakdown Voltage | 45 V (min) | V |
| Collector Current Range for hFE Linearity | 10 nA to 10 mA | A |
| Package Type | 6-Lead TO-78 | - |
Key Features
- Low offset voltage (VOS) of 40 µV typical and 100 µV maximum.
- Low temperature coefficient of offset voltage (TCVOS) of 0.5 µV/°C maximum.
- High current gain (hFE) of 500 minimum.
- Low noise voltage of 0.23 µV p-p from 0.1 Hz to 10 Hz.
- High breakdown voltage of 45 V minimum.
- Excellent hFE linearity from 10 nA to 10 mA.
- Exclusive Silicon Nitride 'Triple-Passivation' process for stability over temperature and time.
Applications
- Weigh scales.
- Low noise, op-amp front ends.
- Current mirrors and current sink/source circuits.
- Low noise instrumentation amplifiers.
- Voltage controlled attenuators.
- Log amplifiers.
Q & A
- What is the MAT01GHZ? The MAT01GHZ is a monolithic dual NPN transistor produced by Analog Devices Inc.
- What is the offset voltage of the MAT01GHZ? The offset voltage (VOS) is 40 µV typical and 100 µV maximum.
- What is the temperature coefficient of offset voltage for the MAT01GHZ? The temperature coefficient of offset voltage (TCVOS) is 0.5 µV/°C maximum.
- What is the minimum current gain (hFE) of the MAT01GHZ? The minimum current gain (hFE) is 500.
- What is the noise voltage of the MAT01GHZ? The noise voltage is 0.23 µV p-p from 0.1 Hz to 10 Hz.
- What is the breakdown voltage of the MAT01GHZ? The breakdown voltage is 45 V minimum.
- What is the collector current range for hFE linearity in the MAT01GHZ? The collector current range for hFE linearity is from 10 nA to 10 mA.
- What package type is the MAT01GHZ available in? The MAT01GHZ is available in a 6-Lead TO-78 package.
- What are some common applications of the MAT01GHZ? Common applications include weigh scales, low noise op-amp front ends, current mirrors, low noise instrumentation amplifiers, voltage controlled attenuators, and log amplifiers.
- Why is the Silicon Nitride 'Triple-Passivation' process important for the MAT01GHZ? The Silicon Nitride 'Triple-Passivation' process ensures excellent stability of critical parameters over both temperature and time.
