BC847BSH-QF
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Nexperia USA Inc. BC847BSH-QF

Manufacturer No:
BC847BSH-QF
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BC847BSH-QF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BSH-QF is a general-purpose NPN/NPN double transistor array produced by Nexperia USA Inc. This component is designed for a wide range of applications, particularly in automotive, industrial, and consumer electronics. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

The BC847BSH-QF is part of the BC847 series, which offers three different gain selections, providing flexibility in design choices. This transistor array is known for its reliability, efficiency, and robust performance, making it a popular choice among engineers and designers.

Key Specifications

Parameter Value Unit
Transistor Polarity NPN/NPN -
Collector Emitter Voltage (V(br)ceo) 45 V
Transition Frequency (ft) 100 MHz
Power Dissipation (Pd) 250 mW
DC Collector Current 100 mA
DC Current Gain (hFE) 125 -
Transistor Case Style SOT23 (TO-236AB) -
No. of Pins 3 -
Operating Temperature Max 150 °C
Collector Emitter Saturation Voltage (Vce(on)) 200 mV

Key Features

  • General-Purpose Transistors: Suitable for a wide range of applications, including amplification and switching.
  • High Collector Emitter Voltage: Up to 45 V, making it robust for various voltage requirements.
  • High Transition Frequency: 100 MHz, ensuring good high-frequency performance.
  • Low Power Dissipation: 250 mW, which is energy-efficient and suitable for battery-powered devices.
  • Compact SOT23 Package: Ideal for space-constrained designs and surface-mount technology.
  • Automotive Qualification: Compliant with AEC-Q101 standards, ensuring reliability in automotive applications.

Applications

  • Automotive Electronics: Suitable for various automotive systems due to its AEC-Q101 qualification.
  • Industrial Control Systems: Used in control circuits, amplifiers, and switching applications.
  • Consumer Electronics: Found in audio amplifiers, power supplies, and other consumer electronic devices.
  • Power and Computing Systems: Used in power management and computing applications requiring reliable transistor performance.
  • Mobile and Wearable Devices: Due to its compact size and low power consumption, it is suitable for mobile and wearable electronics.

Q & A

  1. What is the collector emitter voltage of the BC847BSH-QF transistor?

    The collector emitter voltage (V(br)ceo) of the BC847BSH-QF transistor is 45 V.

  2. What is the transition frequency of the BC847BSH-QF transistor?

    The transition frequency (ft) of the BC847BSH-QF transistor is 100 MHz.

  3. What is the maximum DC collector current of the BC847BSH-QF transistor?

    The maximum DC collector current of the BC847BSH-QF transistor is 100 mA.

  4. What is the package type of the BC847BSH-QF transistor?

    The BC847BSH-QF transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. Is the BC847BSH-QF transistor AEC-Q101 qualified?

    Yes, the BC847BSH-QF transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What are the typical applications of the BC847BSH-QF transistor?

    The BC847BSH-QF transistor is used in automotive electronics, industrial control systems, consumer electronics, power and computing systems, and mobile and wearable devices.

  7. What is the maximum operating temperature of the BC847BSH-QF transistor?

    The maximum operating temperature of the BC847BSH-QF transistor is 150°C.

  8. What is the collector emitter saturation voltage (Vce(on)) of the BC847BSH-QF transistor?

    The collector emitter saturation voltage (Vce(on)) of the BC847BSH-QF transistor is 200 mV.

  9. Is the BC847BSH-QF transistor lead-free and halogen-free?

    Yes, the BC847BSH-QF transistor is lead-free and halogen-free according to Nexperia's definitions.

  10. What is the power dissipation (Pd) of the BC847BSH-QF transistor?

    The power dissipation (Pd) of the BC847BSH-QF transistor is 250 mW.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:270mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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