Overview
The MBT3904DW1T3G is a dual general-purpose transistor device manufactured by onsemi. It is designed to be used in low-power surface mount applications where board space is limited. This device is housed in the SOT-363 six-leaded surface mount package, combining two discrete transistors in one package to simplify circuit design and reduce component count. The MBT3904DW1T3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc | |
| Collector-Base Voltage | VCBO | 60 | Vdc | |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc | |
| Collector Current - Continuous | IC | 200 | mAdc | |
| Electrostatic Discharge | ESD | HBM Class 2, MM Class B | ||
| Total Package Dissipation (TA = 25°C) | PD | 150 | mW | |
| Thermal Resistance, Junction-to-Ambient | RJA | 833 | °C/W | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | °C |
| DC Current Gain (hFE) | 100 | 300 | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.4 | Vdc | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.65 | 0.95 | Vdc |
Key Features
- High DC current gain (hFE) of 100-300
- Low collector-emitter saturation voltage (VCE(sat)) of ≤ 0.4 V
- Simplifies circuit design by integrating two discrete transistors in one package
- Reduces board space and component count
- Available in 8 mm, 7-inch/3,000 unit tape and reel
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free, and RoHS compliant
Applications
The MBT3904DW1T3G is suitable for a variety of low-power surface mount applications, including:
- General-purpose amplifier circuits
- Automotive electronics requiring AEC-Q101 qualification
- Consumer electronics where space is limited
- Industrial control systems
- Audio and small-signal applications
Q & A
- What is the package type of the MBT3904DW1T3G?
The MBT3904DW1T3G is housed in the SOT-363 six-leaded surface mount package.
- What is the maximum collector-emitter voltage (VCEO) for this device?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the DC current gain (hFE) range of the MBT3904DW1T3G?
The DC current gain (hFE) ranges from 100 to 300.
- Is the MBT3904DW1T3G RoHS compliant?
- What are the typical applications for the MBT3904DW1T3G?
It is used in general-purpose amplifier circuits, automotive electronics, consumer electronics, industrial control systems, and audio/small-signal applications.
- What is the thermal resistance, junction-to-ambient (RJA) for this device?
The thermal resistance, junction-to-ambient (RJA), is 833 °C/W.
- What is the maximum collector current (IC) for continuous operation?
The maximum collector current (IC) for continuous operation is 200 mA.
- Is the MBT3904DW1T3G AEC-Q101 qualified?
- What is the junction and storage temperature range for this device?
The junction and storage temperature range is -55°C to +150°C.
- What are the benefits of using the MBT3904DW1T3G in circuit design?
It simplifies circuit design, reduces board space, and reduces component count by integrating two discrete transistors in one package.
