Overview
The BC856S E6433, produced by Infineon Technologies, is a PNP silicon AF (Audio Frequency) transistor array. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. The BC856S E6433 features two internally isolated transistors within a single package, ensuring good matching between the transistors. It is also Pb-free and RoHS compliant, and qualified according to AEC Q101 standards.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage (Max) | VCEO | 65 | V |
Collector-Base Voltage (Max) | VCBO | 80 | V |
Emitter-Base Voltage (Max) | VEBO | 5 | V |
Collector Current (Max) | IC | 100 | mA |
Peak Collector Current (tp ≤ 10 ms) | ICM | 200 | mA |
Total Power Dissipation (Max) | Ptot | 250 | mW |
Junction Temperature (Max) | Tj | 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
DC Current Gain (hFE) (Min) @ Ic, Vce | hFE | 200 @ 2mA, 5V | |
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic | VCEsat | 650 mV @ 5mA, 100mA | |
Transition Frequency | fT | 250 MHz |
Key Features
- PNP silicon AF transistor array with two internally isolated transistors in one package.
- High current gain (hFE) of up to 250.
- Low collector-emitter saturation voltage (VCEsat) of up to 650 mV.
- Pb-free and RoHS compliant package.
- Qualified according to AEC Q101 standards.
- Surface mount package (6-VSSOP, SC-88, SOT-363).
- Transition frequency of 250 MHz.
Applications
- AF input stages.
- Driver applications.
- General-purpose transistor applications requiring high current gain and low saturation voltage.
Q & A
- What is the maximum collector-emitter voltage for the BC856S E6433?
The maximum collector-emitter voltage (VCEO) is 65 V.
- What is the maximum collector current for the BC856S E6433?
The maximum collector current (IC) is 100 mA.
- What is the transition frequency of the BC856S E6433?
The transition frequency (fT) is 250 MHz.
- Is the BC856S E6433 RoHS compliant?
- What is the maximum junction temperature for the BC856S E6433?
The maximum junction temperature (Tj) is 150°C.
- What are the typical applications for the BC856S E6433?
- What is the DC current gain (hFE) of the BC856S E6433?
- What is the collector-emitter saturation voltage (VCEsat) of the BC856S E6433?
- What package types are available for the BC856S E6433?
- Is the BC856S E6433 suitable for life-support devices?