BC856S E6433
  • Share:

Infineon Technologies BC856S E6433

Manufacturer No:
BC856S E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856S E6433, produced by Infineon Technologies, is a PNP silicon AF (Audio Frequency) transistor array. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. The BC856S E6433 features two internally isolated transistors within a single package, ensuring good matching between the transistors. It is also Pb-free and RoHS compliant, and qualified according to AEC Q101 standards.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage (Max) VCEO 65 V
Collector-Base Voltage (Max) VCBO 80 V
Emitter-Base Voltage (Max) VEBO 5 V
Collector Current (Max) IC 100 mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA
Total Power Dissipation (Max) Ptot 250 mW
Junction Temperature (Max) Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
DC Current Gain (hFE) (Min) @ Ic, Vce hFE 200 @ 2mA, 5V
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic VCEsat 650 mV @ 5mA, 100mA
Transition Frequency fT 250 MHz

Key Features

  • PNP silicon AF transistor array with two internally isolated transistors in one package.
  • High current gain (hFE) of up to 250.
  • Low collector-emitter saturation voltage (VCEsat) of up to 650 mV.
  • Pb-free and RoHS compliant package.
  • Qualified according to AEC Q101 standards.
  • Surface mount package (6-VSSOP, SC-88, SOT-363).
  • Transition frequency of 250 MHz.

Applications

  • AF input stages.
  • Driver applications.
  • General-purpose transistor applications requiring high current gain and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage for the BC856S E6433?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What is the maximum collector current for the BC856S E6433?

    The maximum collector current (IC) is 100 mA.

  3. What is the transition frequency of the BC856S E6433?

    The transition frequency (fT) is 250 MHz.

  4. Is the BC856S E6433 RoHS compliant?
  5. What is the maximum junction temperature for the BC856S E6433?

    The maximum junction temperature (Tj) is 150°C.

  6. What are the typical applications for the BC856S E6433?
  7. What is the DC current gain (hFE) of the BC856S E6433?
  8. What is the collector-emitter saturation voltage (VCEsat) of the BC856S E6433?
  9. What package types are available for the BC856S E6433?
  10. Is the BC856S E6433 suitable for life-support devices?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NST3904DXV6T1G
NST3904DXV6T1G
onsemi
TRANS 2NPN 40V 0.2A SOT563
BCV62BE6327HTSA1
BCV62BE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
NSVT65010MW6T1G
NSVT65010MW6T1G
onsemi
TRANS 2PNP 65V 0.1A SC88-6
NST30010MXV6T1G
NST30010MXV6T1G
onsemi
TRANS 2PNP 30V 0.1A SOT563
BC846AS_R1_00001
BC846AS_R1_00001
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC857S-AQ
BC857S-AQ
Diotec Semiconductor
Bip Trans, 45V, 100mA, PNP
BC847CDXV6T5
BC847CDXV6T5
onsemi
TRANS 2NPN 45V 0.1A SOT563
SN75468NG4
SN75468NG4
Texas Instruments
TRANS 7NPN DARL 100V 0.5A DIP
BC846S/ZLH
BC846S/ZLH
Nexperia USA Inc.
TRANS 2NPN 65V 0.1A 6TSSOP
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC857BSHF
BC857BSHF
Nexperia USA Inc.
BC857BSHF

Related Product By Brand

BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
IPW65R041CFD7XKSA1
IPW65R041CFD7XKSA1
Infineon Technologies
650V FET COOLMOS TO247
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP