BC856S E6433
  • Share:

Infineon Technologies BC856S E6433

Manufacturer No:
BC856S E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856S E6433, produced by Infineon Technologies, is a PNP silicon AF (Audio Frequency) transistor array. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. The BC856S E6433 features two internally isolated transistors within a single package, ensuring good matching between the transistors. It is also Pb-free and RoHS compliant, and qualified according to AEC Q101 standards.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage (Max) VCEO 65 V
Collector-Base Voltage (Max) VCBO 80 V
Emitter-Base Voltage (Max) VEBO 5 V
Collector Current (Max) IC 100 mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA
Total Power Dissipation (Max) Ptot 250 mW
Junction Temperature (Max) Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
DC Current Gain (hFE) (Min) @ Ic, Vce hFE 200 @ 2mA, 5V
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic VCEsat 650 mV @ 5mA, 100mA
Transition Frequency fT 250 MHz

Key Features

  • PNP silicon AF transistor array with two internally isolated transistors in one package.
  • High current gain (hFE) of up to 250.
  • Low collector-emitter saturation voltage (VCEsat) of up to 650 mV.
  • Pb-free and RoHS compliant package.
  • Qualified according to AEC Q101 standards.
  • Surface mount package (6-VSSOP, SC-88, SOT-363).
  • Transition frequency of 250 MHz.

Applications

  • AF input stages.
  • Driver applications.
  • General-purpose transistor applications requiring high current gain and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage for the BC856S E6433?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What is the maximum collector current for the BC856S E6433?

    The maximum collector current (IC) is 100 mA.

  3. What is the transition frequency of the BC856S E6433?

    The transition frequency (fT) is 250 MHz.

  4. Is the BC856S E6433 RoHS compliant?
  5. What is the maximum junction temperature for the BC856S E6433?

    The maximum junction temperature (Tj) is 150°C.

  6. What are the typical applications for the BC856S E6433?
  7. What is the DC current gain (hFE) of the BC856S E6433?
  8. What is the collector-emitter saturation voltage (VCEsat) of the BC856S E6433?
  9. What package types are available for the BC856S E6433?
  10. Is the BC856S E6433 suitable for life-support devices?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
289

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BCM857DS,135
BCM857DS,135
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A 6TSOP
BCM857DS,115
BCM857DS,115
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A 6TSOP
NST847BPDP6T5G
NST847BPDP6T5G
onsemi
TRANS NPN/PNP 45V 0.1A SOT963
BC857BS_R1_00001
BC857BS_R1_00001
Panjit International Inc.
SOT-363, TRANSISTOR
PBSS2515VS,115
PBSS2515VS,115
Nexperia USA Inc.
TRANS 2NPN 15V 0.5A SOT666
BC846BS,135
BC846BS,135
Nexperia USA Inc.
TRANS 2NPN 65V 0.1A 6TSSOP
NST857BDP6T5G
NST857BDP6T5G
onsemi
TRANS 2PNP 45V 0.1A SOT963
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
MBT3946DW1T1
MBT3946DW1T1
onsemi
TRANS DUAL GP 200MA 40V SOT363
BC856BDW1T1
BC856BDW1T1
onsemi
TRANS 2PNP 65V 0.1A SOT363
PBSS2515YPN/ZLX
PBSS2515YPN/ZLX
Nexperia USA Inc.
TRANS BISS SC-88
BC847BSHF
BC847BSHF
Nexperia USA Inc.
BC847BSHF

Related Product By Brand

BAS70-06E6327
BAS70-06E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS40-06E6327
BAS40-06E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAV70UE6327HTSA1
BAV70UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I