BC856S E6433
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Infineon Technologies BC856S E6433

Manufacturer No:
BC856S E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BC856S E6433, produced by Infineon Technologies, is a PNP silicon AF (Audio Frequency) transistor array. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. The BC856S E6433 features two internally isolated transistors within a single package, ensuring good matching between the transistors. It is also Pb-free and RoHS compliant, and qualified according to AEC Q101 standards.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage (Max) VCEO 65 V
Collector-Base Voltage (Max) VCBO 80 V
Emitter-Base Voltage (Max) VEBO 5 V
Collector Current (Max) IC 100 mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA
Total Power Dissipation (Max) Ptot 250 mW
Junction Temperature (Max) Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
DC Current Gain (hFE) (Min) @ Ic, Vce hFE 200 @ 2mA, 5V
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic VCEsat 650 mV @ 5mA, 100mA
Transition Frequency fT 250 MHz

Key Features

  • PNP silicon AF transistor array with two internally isolated transistors in one package.
  • High current gain (hFE) of up to 250.
  • Low collector-emitter saturation voltage (VCEsat) of up to 650 mV.
  • Pb-free and RoHS compliant package.
  • Qualified according to AEC Q101 standards.
  • Surface mount package (6-VSSOP, SC-88, SOT-363).
  • Transition frequency of 250 MHz.

Applications

  • AF input stages.
  • Driver applications.
  • General-purpose transistor applications requiring high current gain and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage for the BC856S E6433?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What is the maximum collector current for the BC856S E6433?

    The maximum collector current (IC) is 100 mA.

  3. What is the transition frequency of the BC856S E6433?

    The transition frequency (fT) is 250 MHz.

  4. Is the BC856S E6433 RoHS compliant?
  5. What is the maximum junction temperature for the BC856S E6433?

    The maximum junction temperature (Tj) is 150°C.

  6. What are the typical applications for the BC856S E6433?
  7. What is the DC current gain (hFE) of the BC856S E6433?
  8. What is the collector-emitter saturation voltage (VCEsat) of the BC856S E6433?
  9. What package types are available for the BC856S E6433?
  10. Is the BC856S E6433 suitable for life-support devices?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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