Overview
The SBC857BDW1T1G is a dual PNP bipolar transistor produced by onsemi, designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC857 series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -30 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mA |
| Collector Current - Peak | IC | -200 | mA |
| Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) | PD | 380 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 420 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 - 0.65 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 - 0.9 | V |
Key Features
- AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Housed in the SOT-363/SC-88 package, suitable for low power surface mount applications.
- High DC current gain (hFE) ranging from 220 to 420.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High thermal resistance, junction-to-ambient (RJA) of 328°C/W.
Applications
The SBC857BDW1T1G is designed for general purpose amplifier applications, making it suitable for a wide range of electronic circuits. It is particularly useful in:
- Automotive systems due to its AEC-Q101 qualification.
- Low power surface mount applications.
- Audio amplifiers and other general-purpose amplifier circuits.
- Switching and logic circuits.
Q & A
- What is the package type of the SBC857BDW1T1G transistor?
The SBC857BDW1T1G is housed in the SOT-363/SC-88 package.
- What are the key applications of the SBC857BDW1T1G transistor?
It is designed for general purpose amplifier applications, including automotive systems, low power surface mount applications, audio amplifiers, and switching/logic circuits.
- What is the maximum collector-emitter voltage (VCEO) for the SBC857BDW1T1G?
The maximum collector-emitter voltage (VCEO) is -30 V.
- Is the SBC857BDW1T1G RoHS compliant?
- What is the DC current gain (hFE) range for the SBC857BDW1T1G?
The DC current gain (hFE) ranges from 220 to 420.
- What is the thermal resistance, junction-to-ambient (RJA) for the SBC857BDW1T1G?
The thermal resistance, junction-to-ambient (RJA) is 328°C/W.
- What is the maximum collector current for the SBC857BDW1T1G?
The maximum continuous collector current is -100 mA, and the peak collector current is -200 mA.
- What is the emitter-base voltage (VEBO) for the SBC857BDW1T1G?
The emitter-base voltage (VEBO) is -5.0 V.
- What is the junction and storage temperature range for the SBC857BDW1T1G?
The junction and storage temperature range is -55 to +150°C.
- Is the SBC857BDW1T1G suitable for automotive applications?
