BC857CDW1T1G
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onsemi BC857CDW1T1G

Manufacturer No:
BC857CDW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CDW1T1G is a Dual PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of onsemi's general-purpose transistor series and is available in Pb-Free packages, making it suitable for a wide range of electronic designs. The device is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO -45 - - V
Collector Current (Continuous) I_C - - 0.1 A
Collector-Emitter Saturation Voltage V_CE(sat) - - 0.3 V
Base-Emitter Saturation Voltage V_BE(sat) - - 0.7 V
Base-Emitter On Voltage V_BE(on) -0.6 - -0.75 V
Current Gain (h_FE) h_FE 420 - 800 -
Transition Frequency (f_T) f_T 100 - - MHz
Power Dissipation (P_TM) P_TM - - 0.38 W

Key Features

  • Dual PNP Configuration: The BC857CDW1T1G features two PNP transistors in a single package, making it ideal for applications requiring dual transistor functionality.
  • General Purpose Amplifier: Designed for general purpose amplifier applications, this transistor is versatile and can be used in a variety of circuits.
  • Low Power Surface Mount Package: Housed in the SOT-363/SC-88 package, it is suitable for low power surface mount applications.
  • Pb-Free Packages: Available in Pb-Free packages, making it compliant with environmental regulations.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • General Purpose Amplifiers: Suitable for various amplifier circuits due to its general-purpose design.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
  • Consumer Electronics: Can be used in a wide range of consumer electronic devices requiring low power transistor arrays.
  • Industrial Control Systems: Applicable in industrial control systems where reliable and efficient transistor performance is required.

Q & A

  1. What is the package type of the BC857CDW1T1G transistor?

    The BC857CDW1T1G is housed in the SOT-363/SC-88 package.

  2. What is the maximum collector current of the BC857CDW1T1G?

    The maximum collector current is 0.1 A.

  3. What is the collector-emitter breakdown voltage of the BC857CDW1T1G?

    The collector-emitter breakdown voltage is -45 V.

  4. Is the BC857CDW1T1G AEC-Q101 qualified?

    Yes, the BC857CDW1T1G is AEC-Q101 qualified and PPAP capable.

  5. What is the transition frequency (f_T) of the BC857CDW1T1G?

    The transition frequency is 100 MHz.

  6. What is the power dissipation (P_TM) of the BC857CDW1T1G?

    The power dissipation is 0.38 W.

  7. Is the BC857CDW1T1G available in Pb-Free packages?

    Yes, the BC857CDW1T1G is available in Pb-Free packages.

  8. What are the typical applications of the BC857CDW1T1G?

    It is used in general purpose amplifiers, automotive electronics, consumer electronics, and industrial control systems.

  9. What is the current gain (h_FE) range of the BC857CDW1T1G?

    The current gain (h_FE) range is from 420 to 800.

  10. What is the base-emitter saturation voltage (V_BE(sat)) of the BC857CDW1T1G?

    The base-emitter saturation voltage is 0.7 V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Same Series
BC857CDW1T1G
BC857CDW1T1G
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BC856BDW1T1G
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BC857BDW1T1G
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BC856BDW1T3G
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SBC857CDW1T1G
SBC857CDW1T1G
TRANS 2PNP 45V 0.1A SOT-363
SBC856BDW1T3G
SBC856BDW1T3G
TRANS 2PNP 65V 0.1A SC88/SC70-6
SBC857BDW1T1G
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Similar Products

Part Number BC857CDW1T1G BC858CDW1T1G BC847CDW1T1G BC857BDW1T1G BC857CDW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Active Obsolete
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 NPN (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 30V 45V 45V 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 380mW 380mW 380mW 380mW 380mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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