Overview
The NST3946DP6T5G is a dual complementary general-purpose transistor produced by onsemi. This device is designed for low-power surface mount applications where board space is limited. It combines two discrete transistors (one NPN and one PNP) in a single SOT-963 six-leaded surface mount package, making it ideal for general-purpose amplifier applications. Although this device is discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| DC Current Gain (hFE) | hFE | 100-300 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | ≤ 0.4 | Vdc |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | 0.65 - 0.95 | Vdc |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RJA | 520 - 357 | °C/W |
Key Features
- Dual complementary transistors in a single SOT-963 package, reducing board space and component count.
- Low VCE(sat) of ≤ 0.4 V, enhancing efficiency in amplifier applications.
- DC current gain (hFE) ranging from 100 to 300.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant.
Applications
The NST3946DP6T5G is suitable for various low-power surface mount applications, including:
- General-purpose amplifier circuits.
- Automotive electronics due to its AEC-Q101 qualification.
- Other applications where space is limited and dual complementary transistors are required.
Q & A
- What is the package type of the NST3946DP6T5G?
The NST3946DP6T5G is housed in a SOT-963 six-leaded surface mount package.
- What are the collector-emitter and collector-base voltage ratings?
The collector-emitter voltage (VCEO) is 40 Vdc, and the collector-base voltage (VCBO) is 60 Vdc.
- What is the DC current gain (hFE) range of this transistor?
The DC current gain (hFE) ranges from 100 to 300.
- Is the NST3946DP6T5G suitable for automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat))?
The collector-emitter saturation voltage (VCE(sat)) is ≤ 0.4 Vdc.
- What is the thermal resistance, junction-to-ambient (RJA)?
The thermal resistance, junction-to-ambient (RJA), ranges from 520 to 357 °C/W depending on the conditions.
- Is the NST3946DP6T5G RoHS compliant?
- What is the junction and storage temperature range?
The junction and storage temperature range is -55 to +150 °C.
- Why is the NST3946DP6T5G not recommended for new designs?
The device is discontinued, and onsemi recommends contacting their representative for information on current or alternative devices.
- What are the benefits of using the NST3946DP6T5G in terms of board space?
The device reduces board space and component count by integrating two discrete transistors into a single package.
