BC857RAZ
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Nexperia USA Inc. BC857RAZ

Manufacturer No:
BC857RAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A DFN1412-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857RAZ is a bipolar junction transistor (BJT) produced by Nexperia USA Inc. It is part of the BC857 series, which includes PNP general-purpose transistors. These transistors are designed for low current and low voltage applications, making them suitable for a wide range of electronic designs.

The BC857RAZ is packaged in a DFN1412-6 surface mount package, which is compact and suitable for modern electronic designs where space is a constraint. This transistor is known for its reliability and efficiency, making it a popular choice in various industries.

Key Specifications

Parameter Value Unit
Type PNP -
Package DFN1412-6 -
Maximum Collector Current (I_C) 100 mA
Maximum Collector-Emitter Voltage (V_CE) 45 V
Maximum Power Dissipation (P_tot) 325 mW
Minimum Current Gain (h_FE) 125 -
Maximum Current Gain (h_FE) 800 -
Maximum Junction Temperature (T_J) 150 °C
Minimum Transition Frequency (f_T) 100 MHz

Key Features

  • Compact Package: The DFN1412-6 package is small and surface-mountable, making it ideal for space-constrained designs.
  • Low Current and Voltage: Suitable for applications requiring low current (up to 100 mA) and low voltage (up to 45 V).
  • High Current Gain: Offers a high current gain (h_FE) range from 125 to 800, ensuring reliable amplification and switching performance.
  • High Transition Frequency: With a minimum transition frequency of 100 MHz, it is suitable for high-frequency applications.
  • Reliability and Efficiency: Designed for robust performance and energy efficiency, making it a reliable choice for various electronic designs.

Applications

  • Automotive Electronics: Used in various automotive applications due to its reliability and efficiency.
  • Industrial Electronics: Suitable for industrial control systems, motor drives, and other industrial equipment.
  • Consumer Electronics: Found in consumer devices such as audio amplifiers, switching circuits, and general-purpose amplification.
  • Mobile and Wearable Devices: Used in mobile and wearable devices where space and power efficiency are critical.
  • Power and Computing Systems: Used in power supplies, computing systems, and other applications requiring efficient and reliable transistor performance.

Q & A

  1. What is the maximum collector current of the BC857RAZ transistor?

    The maximum collector current is 100 mA.

  2. What is the package type of the BC857RAZ transistor?

    The package type is DFN1412-6.

  3. What is the maximum collector-emitter voltage of the BC857RAZ transistor?

    The maximum collector-emitter voltage is 45 V.

  4. What is the minimum current gain (h_FE) of the BC857RAZ transistor?

    The minimum current gain is 125.

  5. What is the maximum junction temperature of the BC857RAZ transistor?

    The maximum junction temperature is 150°C.

  6. What is the minimum transition frequency of the BC857RAZ transistor?

    The minimum transition frequency is 100 MHz.

  7. In which industries is the BC857RAZ transistor commonly used?

    It is commonly used in automotive, industrial, consumer electronics, mobile, and wearable devices.

  8. What are the key features of the BC857RAZ transistor?

    Key features include a compact package, low current and voltage, high current gain, high transition frequency, and reliability and efficiency.

  9. Where can I purchase the BC857RAZ transistor?

    You can purchase it from various distributors such as Digi-Key, Mouser Electronics, Arrow Electronics, and others listed on Nexperia's website.

  10. Is the BC857RAZ transistor suitable for high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its minimum transition frequency of 100 MHz.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:325mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1412-6
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Similar Products

Part Number BC857RAZ BC847RAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type 2 PNP (Dual) NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 325mW 480mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C
Mounting Type Surface Mount Surface Mount
Package / Case 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad
Supplier Device Package DFN1412-6 DFN1412-6

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