Overview
The Nexperia BAS116H is a low-leakage switching diode designed for surface-mounted applications. It is encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic package. This diode is particularly suited for applications requiring low leakage current and medium-speed switching capabilities. It is also AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 85 | V |
| Continuous Reverse Voltage (VR) | 75 | V |
| Maximum Peak Forward Surge Current (IFSM) | 4 | A |
| Maximum Average Rectifier Current (IO) | 215 | mA |
| Forward Voltage Drop (VF) at IF = 100 mA | 1.05 | V |
| Reverse Recovery Time (trr) | 3000 | ns |
| Maximum Reverse Current (IR) at VR = 75 V | 0.005 | µA |
| Total Capacitance (CT) | 2 | pF |
| Package | SOD123F |
Key Features
- Low leakage current: typically 3 pA
- Medium-speed switching capabilities with a reverse recovery time of 3000 ns
- AEC-Q101 qualified, making it suitable for automotive applications
- Encapsulated in a small and flat lead SOD123F SMD plastic package
- High peak repetitive reverse voltage of 85 V and continuous reverse voltage of 75 V
- Maximum peak forward surge current of 4 A
Applications
The Nexperia BAS116H is versatile and can be used in various applications across different industries, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics
- Industrial electronics: For applications requiring low leakage current and medium-speed switching
- Consumer electronics: In devices where space is limited and low leakage current is critical
- Power and computing systems: Where efficient and reliable switching diodes are necessary
Q & A
- What is the peak repetitive reverse voltage of the BAS116H?
The peak repetitive reverse voltage (VRRM) of the BAS116H is 85 V
- What is the typical reverse recovery time of the BAS116H?
The typical reverse recovery time (trr) of the BAS116H is 3000 ns
- Is the BAS116H AEC-Q101 qualified?
Yes, the BAS116H is AEC-Q101 qualified, making it suitable for automotive applications
- What is the maximum peak forward surge current of the BAS116H?
The maximum peak forward surge current (IFSM) of the BAS116H is 4 A
- What is the typical forward voltage drop of the BAS116H at 100 mA?
The typical forward voltage drop (VF) at IF = 100 mA is 1.05 V
- What is the package type of the BAS116H?
The BAS116H is encapsulated in a SOD123F SMD plastic package
- What is the maximum reverse current of the BAS116H at 75 V?
The maximum reverse current (IR) at VR = 75 V is 0.005 µA
- What is the total capacitance of the BAS116H?
The total capacitance (CT) of the BAS116H is 2 pF
- In which industries can the BAS116H be used?
The BAS116H can be used in automotive, industrial, consumer electronics, and power and computing systems
- What are the key features of the BAS116H?
The key features include low leakage current, medium-speed switching, AEC-Q101 qualification, and a small SOD123F package
