Overview
The BC847CDW1T1G is a dual NPN bipolar junction transistor (BJT) produced by onsemi. It is packaged in the SOT-363 (SC-70-6) surface mount package, making it suitable for a wide range of electronic applications where compact size and high performance are required. This transistor is known for its high DC current gain, low saturation voltage, and robust operating temperature range, making it a versatile component for various circuit designs.
Key Specifications
| Specification | Value | Unit |
|---|---|---|
| Transistor Type | Dual NPN | |
| Collector-Base Breakdown Voltage (VBRCBO) | 50 | V |
| Collector-Emitter Breakdown Voltage (VBRCEO) | 45 | V |
| Emitter-Base Breakdown Voltage (VBREBO) | 6.0 | V |
| DC Current Gain (hFE) | 420 @ 2mA, 5V | |
| Collector Current (IC) | 100 | mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.6 @ 5mA, 100mA | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7-0.9 | V |
| Power Dissipation (PD) | 380 | mW |
| Operating Temperature (TJ) | -55°C to 150°C | |
| Frequency | 100 | MHz |
| Package | SOT-363 (SC-70-6) |
Key Features
- High DC Current Gain: The BC847CDW1T1G offers a high DC current gain of 420 at 2mA and 5V, making it suitable for amplification and switching applications.
- Low Saturation Voltage: It features a low collector-emitter saturation voltage of 0.6V at 5mA and 100mA, which is beneficial for reducing power consumption in circuits.
- Robust Operating Temperature Range: The transistor can operate over a wide temperature range from -55°C to 150°C, ensuring reliability in various environmental conditions.
- Compact Package: The SOT-363 package is compact and suitable for surface mount technology, making it ideal for space-constrained designs.
- High Frequency Capability: With a frequency of 100MHz, this transistor is suitable for high-frequency applications.
Applications
The BC847CDW1T1G is versatile and can be used in a variety of applications, including:
- Amplifier Circuits: Due to its high DC current gain, it is suitable for use in amplifier circuits.
- Switching Circuits: The low saturation voltage makes it ideal for switching applications where low power consumption is critical.
- Automotive Electronics: Its robust operating temperature range makes it suitable for use in automotive electronics.
- Consumer Electronics: It can be used in various consumer electronic devices where compact size and high performance are required.
Q & A
- What is the package type of the BC847CDW1T1G transistor?
The BC847CDW1T1G transistor is packaged in the SOT-363 (SC-70-6) surface mount package. - What is the maximum collector-emitter breakdown voltage of the BC847CDW1T1G?
The maximum collector-emitter breakdown voltage is 45V. - What is the DC current gain of the BC847CDW1T1G?
The DC current gain (hFE) is 420 at 2mA and 5V. - What is the operating temperature range of the BC847CDW1T1G?
The operating temperature range is from -55°C to 150°C. - What is the maximum collector current of the BC847CDW1T1G?
The maximum collector current is 100mA. - What is the collector-emitter saturation voltage of the BC847CDW1T1G?
The collector-emitter saturation voltage is 0.6V at 5mA and 100mA. - Is the BC847CDW1T1G RoHS compliant?
Yes, the BC847CDW1T1G is RoHS compliant. - What is the power dissipation of the BC847CDW1T1G?
The power dissipation is 380mW. - What is the frequency capability of the BC847CDW1T1G?
The frequency capability is 100MHz. - What are some common applications of the BC847CDW1T1G?
The BC847CDW1T1G can be used in amplifier circuits, switching circuits, automotive electronics, and consumer electronics.
