Overview
The SBC846BDW1T1G is a Dual NPN Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88/SC70-6 package, which is optimized for low power surface mount applications. This transistor is Pb-Free, Halogen Free/BFR Free, and is RoHS Compliant, making it suitable for a wide range of electronic devices. The SBC846BDW1T1G also meets automotive and other stringent application requirements with its AEC-Q101 qualification and PPAP capability.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 65 | V |
Collector-Base Voltage | VCBO | - | - | 80 | V |
Emitter-Base Voltage | VEBO | - | - | 6.0 | V |
Collector Current - Continuous | IC | - | - | 100 | mA |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 | V |
Base-Emitter On Voltage | VBE(on) | 580 | - | 700 | mV |
DC Current Gain | hFE | 200 | - | 420 | - |
Current-Gain Bandwidth Product | fT | - | - | 100 | MHz |
Output Capacitance | Cobo | - | - | 4.5 | pF |
Key Features
- Dual NPN Bipolar Transistor in SOT-363/SC-88/SC70-6 package for low power surface mount applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- AEC-Q101 Qualified and PPAP Capable for automotive and other stringent applications.
- Low VCE(sat) for efficient operation.
- High DC current gain (hFE) for reliable performance.
- Small signal characteristics include a current-gain bandwidth product of 100 MHz.
Applications
The SBC846BDW1T1G is suitable for a variety of general purpose amplifier applications, including but not limited to:
- Automotive electronics due to its AEC-Q101 qualification.
- Consumer electronics requiring low power and high reliability.
- Industrial control systems where robust and efficient transistors are needed.
- Communication devices and audio equipment.
Q & A
- What is the package type of the SBC846BDW1T1G?
The SBC846BDW1T1G is housed in the SOT-363/SC-88/SC70-6 package. - Is the SBC846BDW1T1G RoHS Compliant?
Yes, the SBC846BDW1T1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. - What is the maximum collector-emitter voltage (VCEO) for the SBC846BDW1T1G?
The maximum VCEO is 65 V. - What is the typical DC current gain (hFE) of the SBC846BDW1T1G?
The typical DC current gain (hFE) is between 200 and 420. - What is the collector-emitter saturation voltage (VCE(sat)) of the SBC846BDW1T1G?
The VCE(sat) is 0.25 V. - What are the operating temperature ranges for the SBC846BDW1T1G?
The junction and storage temperature range is from -55°C to +150°C. - Is the SBC846BDW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other stringent applications. - What is the current-gain bandwidth product (fT) of the SBC846BDW1T1G?
The fT is 100 MHz. - What is the output capacitance (Cobo) of the SBC846BDW1T1G?
The output capacitance is 4.5 pF. - What is the base-emitter on voltage (VBE(on)) of the SBC846BDW1T1G?
The VBE(on) is between 580 mV and 700 mV.