BC848CDW1T1G
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onsemi BC848CDW1T1G

Manufacturer No:
BC848CDW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 30V 0.1A SC88/SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848CDW1T1G is a dual general-purpose NPN transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SOT-363/SC-88 package. This transistor is part of the BC848 series, which is known for its reliability and versatility in various electronic circuits. The BC848CDW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Unit Min Typ Max
Collector-Emitter Voltage VCEO V - - 30
Collector-Base Voltage VCBO V - - 30
Emitter-Base Voltage VEBO V - - 5.0
Collector Current - Continuous IC mA - - 100
Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) PD mW - - 250
Thermal Resistance, Junction to Ambient RJA °C/W - - 328
Junction and Storage Temperature Range TJ, Tstg °C -55 - 150
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE - 150 270 520
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) V - - 0.25
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) V - - 0.7

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
  • Low Power Surface Mount Package (SOT-363/SC-88): Ideal for compact and efficient circuit designs.
  • High DC Current Gain: hFE ranges from 150 to 520, depending on the collector current and base-emitter voltage.
  • Low Saturation Voltages: VCE(sat) and VBE(sat) are minimized to reduce power consumption and improve efficiency.
  • Broad Temperature Range: Operates reliably from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • General Purpose Amplifier Circuits: Suitable for a wide range of amplifier applications due to its high current gain and low saturation voltages.
  • Automotive Electronics: AEC-Q101 qualification makes it ideal for use in automotive systems where reliability and durability are critical.
  • Consumer Electronics: Used in various consumer electronic devices that require compact, efficient, and reliable transistor performance.
  • Industrial Control Systems: Can be used in industrial control circuits where robustness and reliability are essential.

Q & A

  1. What is the maximum collector-emitter voltage for the BC848CDW1T1G transistor?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) is rated at 100 mA.

  3. Is the BC848CDW1T1G transistor RoHS compliant?

    Yes, the BC848CDW1T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the thermal resistance, junction to ambient, for this transistor?

    The thermal resistance, junction to ambient (RJA), is 328 °C/W.

  5. What is the typical DC current gain (hFE) for the BC848CDW1T1G?

    The typical DC current gain (hFE) ranges from 150 to 520, depending on the operating conditions.

  6. What are the operating temperature ranges for the BC848CDW1T1G?

    The junction and storage temperature range is from -55°C to 150°C.

  7. Is the BC848CDW1T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  8. What package type is the BC848CDW1T1G transistor available in?

    The transistor is housed in the SOT-363/SC-88 package.

  9. What are the typical base-emitter saturation voltage (VBE(sat)) and collector-emitter saturation voltage (VCE(sat)) for this transistor?

    The typical VBE(sat) is 0.7 V, and the typical VCE(sat) is 0.25 V.

  10. Can the BC848CDW1T1G be used in general-purpose amplifier circuits?

    Yes, it is designed for general-purpose amplifier applications due to its high current gain and low saturation voltages.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number BC848CDW1T1G BC848CPDW1T1G BC858CDW1T1G BC847CDW1T1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
Transistor Type 2 NPN (Dual) NPN, PNP 2 PNP (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 380mW 250mW 380mW 380mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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