BC848CPDW1T1G
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onsemi BC848CPDW1T1G

Manufacturer No:
BC848CPDW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 30V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848CPDW1T1G is a dual general-purpose transistor from onsemi, designed for low power surface mount applications. This transistor is part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series, which are complementary NPN/PNP devices. The BC848CPDW1T1G is housed in the SOT-363/SC-88 package, making it suitable for a variety of general-purpose amplifier applications.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage (VCEO) VCEO 30 V
Collector-Base Voltage (VCBO) VCBO 30 V
Emitter-Base Voltage (VEBO) VEBO 6.0 V
Collector Current - Continuous (IC) IC 100 mAdc
Collector Current - Peak (ICM) ICM 200 mAdc
DC Current Gain (hFE) hFE 150 - 520 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) 0.1 - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) 0.7 - 0.9 V
Current-Gain Bandwidth Product (fT) fT 100 MHz
Output Capacitance (Cob) Cob 4.5 pF
Junction and Storage Temperature (TJ, Tstg) TJ, Tstg -55 to +150 °C

Key Features

  • Complementary NPN/PNP Transistors: The BC848CPDW1T1G is part of a series that includes both NPN and PNP transistors, making it versatile for various circuit designs.
  • Low Power Surface Mount: Housed in the SOT-363/SC-88 package, this transistor is ideal for low power surface mount applications.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • High DC Current Gain: Offers a high DC current gain (hFE) ranging from 150 to 520, ensuring efficient amplifier performance.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, reducing power consumption and improving efficiency.

Applications

  • General Purpose Amplifiers: Suitable for a wide range of general-purpose amplifier applications due to its complementary NPN/PNP configuration.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for use in automotive systems.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring low power amplification.
  • Industrial Control Systems: Applicable in industrial control systems where reliable and efficient amplification is necessary.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC848CPDW1T1G transistor?

    The collector-emitter voltage (VCEO) of the BC848CPDW1T1G transistor is 30 V.

  2. What is the maximum continuous collector current (IC) for this transistor?

    The maximum continuous collector current (IC) is 100 mA.

  3. Is the BC848CPDW1T1G transistor RoHS compliant?

    Yes, the BC848CPDW1T1G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the typical DC current gain (hFE) of the BC848CPDW1T1G transistor?

    The typical DC current gain (hFE) ranges from 150 to 520.

  5. What is the junction and storage temperature range for this transistor?

    The junction and storage temperature range is -55°C to +150°C.

  6. What package type is the BC848CPDW1T1G transistor housed in?

    The BC848CPDW1T1G transistor is housed in the SOT-363/SC-88 package.

  7. Is the BC848CPDW1T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  8. What is the output capacitance (Cob) of the BC848CPDW1T1G transistor?

    The output capacitance (Cob) is 4.5 pF.

  9. What is the current-gain bandwidth product (fT) of the BC848CPDW1T1G transistor?

    The current-gain bandwidth product (fT) is 100 MHz.

  10. What are some common applications of the BC848CPDW1T1G transistor?

    It is commonly used in general-purpose amplifiers, automotive electronics, consumer electronics, and industrial control systems.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number BC848CPDW1T1G BC848CDW1T1G BC848CPDW1T1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN, PNP 2 NPN (Dual) NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250mW 380mW 380mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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