Overview
The SBC847BPDW1T1G is a dual general-purpose transistor array produced by ON Semiconductor. This component is part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series, designed for low power surface mount applications. It is housed in the SOT-363/SC-88 package, making it suitable for various general-purpose amplifier applications. The device is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (NPN) | V(BR)CBO | 50 | 50 | V | |
| Collector-Emitter Breakdown Voltage (NPN) | V(BR)CEO | 45 | 45 | V | |
| Emitter-Base Breakdown Voltage (NPN) | V(BR)EBO | 6.0 | 6.0 | V | |
| Collector Current - Continuous (NPN) | IC | 100 | mAdc | ||
| Collector Current - Peak (NPN) | ICM | 200 | mAdc | ||
| DC Current Gain (NPN) | hFE | 200 | 420 | 800 | |
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | 0.024 | 0.25 | 0.6 | V |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | 0.7 | 0.9 | V | |
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | |
| Thermal Resistance, Junction-to-Ambient | RJA | 328 | °C/W |
Key Features
- Complementary NPN and PNP transistors in a single package, enhancing design flexibility and simplifying circuit design.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental compliance.
- Housed in the SOT-363/SC-88 package, ideal for low power surface mount applications.
- High DC current gain (hFE) ranging from 200 to 800, depending on the specific device and operating conditions.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)), contributing to efficient operation.
Applications
The SBC847BPDW1T1G is versatile and can be used in a variety of applications, including:
- General-purpose amplifier circuits.
- Automotive electronics due to its AEC-Q101 qualification.
- Industrial control systems requiring reliable and efficient transistor performance.
- Consumer electronics where low power consumption and compact design are essential.
- Audio and signal processing circuits where high gain and low noise are critical.
Q & A
- What is the package type of the SBC847BPDW1T1G?
The SBC847BPDW1T1G is housed in the SOT-363/SC-88 package. - Is the SBC847BPDW1T1G RoHS compliant?
Yes, the SBC847BPDW1T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the maximum collector current for the NPN transistor in the SBC847BPDW1T1G?
The maximum continuous collector current (IC) is 100 mA, and the peak collector current (ICM) is 200 mA. - What is the DC current gain (hFE) range for the NPN transistor?
The DC current gain (hFE) ranges from 200 to 800, depending on the specific device and operating conditions. - What are the junction and storage temperature ranges for the SBC847BPDW1T1G?
The junction and storage temperature range is from -55°C to 150°C. - What is the thermal resistance, junction-to-ambient (RJA), for the SBC847BPDW1T1G?
The thermal resistance, junction-to-ambient (RJA), is 328 °C/W. - Is the SBC847BPDW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What are some typical applications of the SBC847BPDW1T1G?
It is used in general-purpose amplifier circuits, automotive electronics, industrial control systems, consumer electronics, and audio and signal processing circuits. - What is the collector-emitter breakdown voltage (V(BR)CEO) for the NPN transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is 45 V. - What is the emitter-base breakdown voltage (V(BR)EBO) for the NPN transistor?
The emitter-base breakdown voltage (V(BR)EBO) is 6.0 V.
