Overview
The BC847CDXV6T5 is a general-purpose NPN epitaxial silicon transistor produced by onsemi. It is designed for low-power surface mount applications and is housed in the SOT-563 package. This transistor is part of the BC847 series, which is known for its versatility in both switching and amplifier applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | 5.0 | - | V |
| Collector Cutoff Current | ICBO | - | - | 15 nA | - |
| DC Current Gain | hFE | 420 | - | 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 V (IC = 10 mA, IB = 0.5 mA) | - |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 V (IC = 10 mA, IB = 0.5 mA) | - |
| Base-Emitter On Voltage | VBE(on) | 580 mV | - | 700 mV (IC = 2 mA, VCE = 5 V) | - |
| Current Gain Bandwidth Product | fT | 100 MHz | - | - | - |
| Output Capacitance | Cobo | - | - | 1.5 pF (VCB = 10 V, f = 1 MHz) | - |
Key Features
- General-purpose NPN epitaxial silicon transistor
- Suitable for both switching and amplifier applications
- Low noise characteristics
- Housed in the SOT-563 package, designed for low-power surface mount applications
- High DC current gain (hFE) with a range of 420 to 800
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat))
- High current gain bandwidth product (fT) of 100 MHz
Applications
The BC847CDXV6T5 transistor is versatile and can be used in a variety of applications, including:
- General-purpose amplifiers
- Switching circuits
- Automotive electronics
- Consumer electronics
- Industrial control systems
Q & A
- What is the package type of the BC847CDXV6T5 transistor?
The BC847CDXV6T5 transistor is housed in the SOT-563 package. - What are the typical applications of the BC847CDXV6T5 transistor?
The BC847CDXV6T5 is used in general-purpose amplifiers, switching circuits, automotive electronics, consumer electronics, and industrial control systems. - What is the collector-base breakdown voltage of the BC847CDXV6T5 transistor?
The collector-base breakdown voltage (V(BR)CBO) is 50 V. - What is the DC current gain (hFE) range of the BC847CDXV6T5 transistor?
The DC current gain (hFE) ranges from 420 to 800. - What is the collector-emitter saturation voltage (VCE(sat)) of the BC847CDXV6T5 transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V for IC = 10 mA and IB = 0.5 mA. - What is the base-emitter on voltage (VBE(on)) of the BC847CDXV6T5 transistor?
The base-emitter on voltage (VBE(on)) is typically between 580 mV and 700 mV for IC = 2 mA and VCE = 5 V. - What is the current gain bandwidth product (fT) of the BC847CDXV6T5 transistor?
The current gain bandwidth product (fT) is 100 MHz. - What is the output capacitance (Cobo) of the BC847CDXV6T5 transistor?
The output capacitance (Cobo) is typically 1.5 pF at VCB = 10 V and f = 1 MHz. - Is the BC847CDXV6T5 transistor suitable for high-temperature applications?
The transistor has a junction temperature range of -55°C to +150°C, making it suitable for a wide range of temperature conditions. - Where can I find detailed specifications and ordering information for the BC847CDXV6T5 transistor?
Detailed specifications and ordering information can be found on the onsemi website or through distributors like Digi-Key and Mouser.
