BC847CDXV6T5G
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onsemi BC847CDXV6T5G

Manufacturer No:
BC847CDXV6T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 45V 0.1A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CDXV6T5G is a dual general-purpose NPN silicon transistor manufactured by ON Semiconductor. It is designed for low power surface mount applications and is suitable for general-purpose amplifier and switching applications. The transistor is housed in the SOT-563 package, which is Pb-free and has a moisture sensitivity level of 1 per J-STD-020. This transistor is part of the BC847 series, known for its reliability and performance in various electronic circuits.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter VoltageVCEO--45V
Collector-Base VoltageVCBO--50V
Emitter-Base VoltageVEBO--6.0V
Collector Cutoff CurrentICBO--15 nAA
DC Current Gain (IC = 10 mA, VCE = 5.0 V)hFE420-800-
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)VCE(sat)--0.25V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)VBE(sat)--0.7V
Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)fT--100MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)Cobo--1.5pF

Key Features

  • General-purpose NPN silicon transistor suitable for amplifier and switching applications.
  • Housed in the SOT-563 package, which is Pb-free and has a moisture sensitivity level of 1 per J-STD-020.
  • High collector-emitter voltage (VCEO) of up to 45 V.
  • Low noise operation.
  • High DC current gain (hFE) ranging from 420 to 800.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High current-gain bandwidth product (fT) of 100 MHz.
  • ESD rating - Human Body Model: >4000 V, Machine Model: >400 V.

Applications

The BC847CDXV6T5G is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Switching circuits.
  • Low power surface mount applications.
  • Automotive and other applications requiring unique site and control change requirements.
  • Thick and thin-film circuits.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847CDXV6T5G?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the typical DC current gain (hFE) of the BC847CDXV6T5G?
    The typical DC current gain (hFE) ranges from 420 to 800.
  3. What is the package type of the BC847CDXV6T5G?
    The transistor is housed in the SOT-563 package.
  4. Is the BC847CDXV6T5G Pb-free?
    Yes, the BC847CDXV6T5G is Pb-free.
  5. What is the moisture sensitivity level of the BC847CDXV6T5G?
    The moisture sensitivity level is 1 per J-STD-020.
  6. What are the ESD ratings for the BC847CDXV6T5G?
    The ESD ratings are >4000 V for the Human Body Model and >400 V for the Machine Model.
  7. What is the current-gain bandwidth product (fT) of the BC847CDXV6T5G?
    The current-gain bandwidth product (fT) is 100 MHz.
  8. What are some common applications of the BC847CDXV6T5G?
    Common applications include general-purpose amplifier circuits, switching circuits, and low power surface mount applications.
  9. Is the BC847CDXV6T5G suitable for automotive applications?
    Yes, it is suitable for automotive and other applications requiring unique site and control change requirements.
  10. What is the output capacitance of the BC847CDXV6T5G?
    The output capacitance (Cobo) is 1.5 pF at VCB = 10 V and f = 1.0 MHz.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:500mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number BC847CDXV6T5G BC848CDXV6T5G BC847CDXV6T1G BC847CDXV6T5
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete
Transistor Type 2 NPN (Dual) 2 NPN (Dual) 2 NPN (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 30V 45V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 500mW 500mW 500mW 500mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563

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