BC857QASZ
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Nexperia USA Inc. BC857QASZ

Manufacturer No:
BC857QASZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 45V 0.1A DFN1010B-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857QASZ is a PNP/PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is packaged in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. It is designed for a wide range of applications, including automotive, industrial, power, computing, consumer, mobile, and wearable devices. The BC857QASZ is part of Nexperia’s extensive portfolio of bipolar transistors, known for their efficiency, robustness, and reliability.

Key Specifications

Type number Package version Package name Size (mm) Channel type Configuration Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] hFE [max] fT [min] (MHz)
BC857QAS SOT1216 DFN1010B-6 1.1 x 1.0 x 0.37 PNP 2 230.0 -45.0 -100.0 200.0 450.0 100.0

Key Features

  • Leadless ultra small DFN1010B-6 (SOT1216) package, ideal for space-constrained designs.
  • PNP/PNP configuration, suitable for a variety of switching and amplification applications.
  • Maximum collector-emitter voltage (VCEO) of 45 V and maximum collector current (IC) of 100 mA.
  • High current gain (hFE) with a minimum of 200 and a maximum of 450.
  • Transition frequency (fT) of at least 100 MHz, ensuring high-frequency performance.
  • RoHS compliant and suitable for reflow soldering.

Applications

The BC857QASZ transistor is versatile and can be used in a wide range of applications, including:

  • Automotive systems: For various control and switching functions.
  • Industrial control: In motor control, power supplies, and other industrial automation systems.
  • Consumer electronics: In audio amplifiers, power management circuits, and other consumer devices.
  • Mobile and wearable devices: Due to its small package size and low power consumption.
  • Computing and power systems: For voltage regulation, switching, and amplification tasks.

Q & A

  1. What is the package type of the BC857QASZ transistor?

    The BC857QASZ transistor is packaged in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

  2. What are the maximum collector-emitter voltage and current ratings of the BC857QASZ?

    The maximum collector-emitter voltage (VCEO) is 45 V, and the maximum collector current (IC) is 100 mA.

  3. What is the current gain (hFE) range of the BC857QASZ transistor?

    The current gain (hFE) ranges from a minimum of 200 to a maximum of 450.

  4. What is the transition frequency (fT) of the BC857QASZ transistor?

    The transition frequency (fT) is at least 100 MHz.

  5. Is the BC857QASZ transistor RoHS compliant?
  6. What are some common applications for the BC857QASZ transistor?
  7. How can I purchase the BC857QASZ transistor?
  8. What is the size of the BC857QASZ transistor package?
  9. Can the BC857QASZ transistor be used in high-frequency applications?
  10. Is the BC857QASZ transistor suitable for reflow soldering?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:100mV @ 2mA, 5V
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:350mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1010B-6
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$0.32
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Similar Products

Part Number BC857QASZ BCM857QASZ BC847QASZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual) Matched Pair 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V 45V
Vce Saturation (Max) @ Ib, Ic 100mV @ 2mA, 5V 400mV @ 5mA, 100mA 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 350mW 350mW 350mW
Frequency - Transition 100MHz 175MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6 DFN1010B-6 DFN1010B-6

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