BC847QASZ
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Nexperia USA Inc. BC847QASZ

Manufacturer No:
BC847QASZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 45V 0.1A DFN1010B-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847QASZ is an automotive-qualified NPN/NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is packaged in a leadless ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. It is designed for general-purpose switching and amplification and is particularly suited for mobile and automotive applications due to its compact size and robust performance.

Key Specifications

Type numberPackage versionPackage nameSize (mm)Channel typeConfigurationP tot (mW)V CEO [max] (V)I C [max] (mA)h FE [min]h FE [max]f T [min] (MHz)
BC847QASSOT1216DFN1010B-61.1 x 1.0 x 0.37NPN223045200200450100

Key Features

  • Low package height of 0.37 mm, making it ideal for space-constrained designs.
  • Reduces component count and pick-and-place costs due to its compact package.
  • Automotive qualified, ensuring reliability and performance in demanding automotive environments.
  • General-purpose switching and amplification capabilities.
  • PNP/PNP complement: BC857QAS, and NPN/PNP complement: BC847QAPN.

Applications

The BC847QASZ transistor is versatile and finds applications across various industries, including:

  • Automotive: For general-purpose switching and amplification in vehicle systems.
  • Mobile: Suitable for mobile devices due to its small size and low power consumption.
  • Industrial: Used in industrial control systems and automation.
  • Consumer Electronics: Applicable in a wide range of consumer electronic devices requiring reliable switching and amplification.

Q & A

  1. What is the maximum collector-emitter voltage (V CEO) of the BC847QASZ transistor?
    The maximum collector-emitter voltage (V CEO) is 45 V.
  2. What is the maximum collector current (I C) of the BC847QASZ transistor?
    The maximum collector current (I C) is 200 mA.
  3. What is the package type of the BC847QASZ transistor?
    The package type is DFN1010B-6 (SOT1216), a leadless ultra-small Surface-Mounted Device (SMD) plastic package.
  4. What are the dimensions of the BC847QASZ package?
    The dimensions are 1.1 x 1.0 x 0.37 mm.
  5. Is the BC847QASZ transistor automotive qualified?
    Yes, the BC847QASZ transistor is automotive qualified.
  6. What are the PNP/PNP and NPN/PNP complements of the BC847QASZ transistor?
    The PNP/PNP complement is BC857QAS, and the NPN/PNP complement is BC847QAPN.
  7. What is the minimum current gain (h FE) of the BC847QASZ transistor?
    The minimum current gain (h FE) is 200.
  8. What is the maximum current gain (h FE) of the BC847QASZ transistor?
    The maximum current gain (h FE) is 450.
  9. What is the minimum transition frequency (f T) of the BC847QASZ transistor?
    The minimum transition frequency (f T) is 100 MHz.
  10. Where can I purchase the BC847QASZ transistor?
    You can purchase the BC847QASZ transistor from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:350mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1010B-6
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Similar Products

Part Number BC847QASZ BC857QASZ BCM847QASZ BC847QASX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
Transistor Type 2 NPN (Dual) 2 PNP (Dual) NPN, PNP NPN, PNP Complementary
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V 45V 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA 100mV @ 2mA, 5V 400mV @ 5mA, 100mA 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 350mW 350mW 350mW 230mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6 DFN1010B-6 DFN1010B-6 DFN1010B-6

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