BCV62AE6327HTSA1
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Infineon Technologies BCV62AE6327HTSA1

Manufacturer No:
BCV62AE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 30V 0.1A SOT143
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV62AE6327HTSA1 is a bipolar junction transistor (BJT) array produced by Infineon Technologies. This component is designed as a dual PNP transistor array, making it suitable for a variety of applications requiring multiple transistor functions in a single package. The device is housed in a surface mount PG-SOT-143 package, which is compact and efficient for modern electronic designs.

Key Specifications

ParameterValue
Transistor TypeDual PNP BJT Array
Collector-Base Voltage (Vcbo)30 V
Collector Current (Ic)100 mA
Peak Collector Current (Icm)200 mA
Emitter-Base Voltage (Vebo)6 V
Transition Frequency (fT)250 MHz
Power Dissipation (Ptot)300 mW
Package TypePG-SOT-143 (Surface Mount)

Key Features

  • Dual PNP transistor configuration in a single package, reducing board space and increasing design efficiency.
  • High transition frequency of 250 MHz, suitable for high-frequency applications.
  • Compact PG-SOT-143 surface mount package for easy integration into modern electronic designs.
  • Low power dissipation of 300 mW, contributing to energy-efficient operation.

Applications

The BCV62AE6327HTSA1 is versatile and can be used in various electronic circuits, including:

  • Audio amplifiers and audio signal processing.
  • Switching and amplification in consumer electronics.
  • Automotive electronics, such as in-car audio systems and other control circuits.
  • Industrial control systems and automation.

Q & A

  1. What is the BCV62AE6327HTSA1? The BCV62AE6327HTSA1 is a dual PNP bipolar junction transistor (BJT) array produced by Infineon Technologies.
  2. What is the collector current rating of the BCV62AE6327HTSA1? The collector current (Ic) is rated at 100 mA, with a peak collector current (Icm) of 200 mA.
  3. What is the transition frequency of the BCV62AE6327HTSA1? The transition frequency (fT) is 250 MHz.
  4. What type of package does the BCV62AE6327HTSA1 use? The BCV62AE6327HTSA1 is housed in a PG-SOT-143 surface mount package.
  5. What are some common applications for the BCV62AE6327HTSA1? Common applications include audio amplifiers, consumer electronics, automotive electronics, and industrial control systems.
  6. What is the power dissipation of the BCV62AE6327HTSA1? The power dissipation (Ptot) is 300 mW.
  7. What is the emitter-base voltage rating of the BCV62AE6327HTSA1? The emitter-base voltage (Vebo) is rated at 6 V.
  8. Can the BCV62AE6327HTSA1 be used in high-frequency applications? Yes, with a transition frequency of 250 MHz, it is suitable for high-frequency applications.
  9. Is the BCV62AE6327HTSA1 available in bulk quantities? Yes, it is available for purchase in various quantities from distributors like Mouser and Digi-Key.
  10. Where can I find detailed specifications for the BCV62AE6327HTSA1? Detailed specifications can be found in the datasheet available on Infineon Technologies' official website and through distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:300mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
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Same Series
BCV62CE6327HTSA1
BCV62CE6327HTSA1
TRANS 2PNP 30V 0.1A SOT143
BCV62AE6327HTSA1
BCV62AE6327HTSA1
TRANS 2PNP 30V 0.1A SOT143
BCV62BE6327HTSA1
BCV62BE6327HTSA1
TRANS 2PNP 30V 0.1A SOT143

Similar Products

Part Number BCV62AE6327HTSA1 BCV62CE6327HTSA1 BCV62BE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300mW 300mW 300mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package PG-SOT-143-3D PG-SOT-143-3D PG-SOT-143-3D

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