Overview
The IRFP4468PBFXKMA1 is a high-performance HEXFET Power MOSFET produced by Infineon Technologies. This device is designed to offer enhanced ruggedness and efficiency, making it suitable for a variety of high-power applications. The IRFP4468PBFXKMA1 features improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and avalanche SOA (Safe Operating Area). It is particularly optimized for lead-free applications and high-efficiency synchronous rectification in SMPS (Switch-Mode Power Supplies), uninterruptible power supplies, and high-speed power switching circuits.
Key Specifications
| Parameter | Units | Typical | Maximum |
|---|---|---|---|
| VDSS (Drain-Source Voltage) | V | 100 | 100 |
| RDS(on) (Drain-Source On-Resistance) | mΩ | 2.0 | 2.6 |
| ID (Continuous Drain Current at TC = 25°C, Silicon Limited) | A | 290 | 290 |
| ID (Continuous Drain Current at TC = 25°C, Package Limited) | A | 195 | 195 |
| IDM (Pulsed Drain Current) | A | - | - |
| PD (Maximum Power Dissipation at TC = 25°C) | W | - | - |
| VGS (Gate-Source Voltage) | V | - | ±20 |
| TJ (Operating Junction Temperature) | °C | - | 175 |
| TSTG (Storage Temperature Range) | °C | -55 to 150 | -55 to 150 |
Key Features
- Improved gate, avalanche, and dynamic dV/dt ruggedness.
- Fully characterized capacitance and avalanche SOA.
- Enhanced body diode dV/dt and dI/dt capability.
- Lead-free applications.
- High efficiency synchronous rectification in SMPS.
- High speed power switching and hard switched circuits.
Applications
- Switch-Mode Power Supplies (SMPS).
- Uninterruptible Power Supplies (UPS).
- High-speed power switching circuits.
- Hard switched and high frequency circuits.
Q & A
- What is the maximum drain-source voltage (VDSS) of the IRFP4468PBFXKMA1? The maximum drain-source voltage is 100V.
- What is the typical drain-source on-resistance (RDS(on)) of the IRFP4468PBFXKMA1? The typical drain-source on-resistance is 2.0 mΩ.
- What is the continuous drain current at TC = 25°C for the IRFP4468PBFXKMA1? The continuous drain current at TC = 25°C is 290A (silicon limited) and 195A (package limited).
- What are the key features of the IRFP4468PBFXKMA1? Key features include improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dV/dt and dI/dt capability.
- What are the typical applications of the IRFP4468PBFXKMA1? Typical applications include SMPS, UPS, high-speed power switching circuits, and hard switched and high frequency circuits.
- What is the operating junction temperature range for the IRFP4468PBFXKMA1? The operating junction temperature range is -55°C to 175°C.
- What is the maximum gate-source voltage (VGS) for the IRFP4468PBFXKMA1? The maximum gate-source voltage is ±20V.
- Does the IRFP4468PBFXKMA1 support lead-free applications? Yes, it supports lead-free applications.
- What is the typical turn-on delay time (td(on)) for the IRFP4468PBFXKMA1? The typical turn-on delay time is 52 ns.
- What is the reverse recovery time (trr) of the body diode in the IRFP4468PBFXKMA1? The reverse recovery time is 100 ns at TJ = 25°C and VR = 85V.
