IRFP064NPBF
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Infineon Technologies IRFP064NPBF

Manufacturer No:
IRFP064NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 55V 110A TO247AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFP064NPBF is a 55V single N-Channel Power MOSFET manufactured by Infineon Technologies, formerly International Rectifier. This device is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide range of devices suitable for various applications. The IRFP064NPBF is packaged in a TO-247 package, which is designed for efficient heat dissipation and high power handling capabilities.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (VDSS)200V
Continuous Drain Current (ID)11A
Pulsed Drain Current (IDM)64A
Rated Gate-Source Voltage (VGS)±20V
On-Resistance (RDS(on))0.045Ω
PackageTO-247

Key Features

  • N-Channel enhancement mode
  • High power and voltage handling capabilities
  • TO-247 package for efficient heat dissipation
  • Low on-resistance (RDS(on)) of 0.045Ω
  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz

Applications

  • Switching applications in power supplies, converters, and motor drivers
  • High-current amplifiers
  • Power management circuits
  • DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications

Q & A

  1. What is the maximum drain-source voltage of the IRFP064NPBF?
    The maximum drain-source voltage (VDSS) is 200V.
  2. What is the continuous drain current rating of the IRFP064NPBF?
    The continuous drain current (ID) is 11A.
  3. What is the pulsed drain current rating of the IRFP064NPBF?
    The pulsed drain current (IDM) is 64A.
  4. What is the rated gate-source voltage of the IRFP064NPBF?
    The rated gate-source voltage (VGS) is ±20V.
  5. What is the on-resistance of the IRFP064NPBF?
    The on-resistance (RDS(on)) is 0.045Ω.
  6. In what package is the IRFP064NPBF available?
    The IRFP064NPBF is available in a TO-247 package.
  7. What are some common applications of the IRFP064NPBF?
    Common applications include switching in power supplies, converters, motor drivers, high-current amplifiers, and power management circuits.
  8. Is the IRFP064NPBF qualified according to any industry standards?
    Yes, the IRFP064NPBF is qualified according to JEDEC standards.
  9. What is the planar cell structure of the IRFP064NPBF beneficial for?
    The planar cell structure provides a wide Safe Operating Area (SOA).
  10. Why is the TO-247 package beneficial for the IRFP064NPBF?
    The TO-247 package is beneficial for efficient heat dissipation and high power handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 59A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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In Stock

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Similar Products

Part Number IRFP064NPBF IRFP064PBF IRFP264NPBF IRFP064VPBF IRFP044NPBF IRFP054NPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 250 V 60 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 70A (Tc) 44A (Tc) 130A (Tc) 53A (Tc) 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 59A, 10V 9mOhm @ 78A, 10V 60mOhm @ 25A, 10V 5.5mOhm @ 78A, 10V 20mOhm @ 29A, 10V 12mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 190 nC @ 10 V 210 nC @ 10 V 260 nC @ 10 V 61 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V 7400 pF @ 25 V 3860 pF @ 25 V 6760 pF @ 25 V 1500 pF @ 25 V 2900 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 200W (Tc) 300W (Tc) 380W (Tc) 250W (Tc) 120W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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