BAS70-06E6433
  • Share:

Infineon Technologies BAS70-06E6433

Manufacturer No:
BAS70-06E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE - HIGH SPEED SWIT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-06E6433 is a silicon planar dual Schottky barrier diode produced by Infineon Technologies. This component is designed for high-speed switching applications and is known for its reliability and performance in various electronic circuits. It is packaged in a SOT-23 case, making it suitable for compact and efficient designs.

Key Specifications

ParameterValue
Device TypeSilicon planar dual Schottky barrier diode
Maximum Continuous Forward Current70 mA
Package / CaseSOT-23
Diode ConfigurationCommon Anode
RoHS CompliancePb-free (RoHS compliant)

Key Features

  • General-purpose diode for high-speed switching
  • Circuit protection
  • Voltage clamping
  • High-level detecting and mixing
  • Pb-free (RoHS compliant) package

Applications

The BAS70-06E6433 is versatile and can be used in various applications, including:

  • High-speed switching circuits
  • Circuit protection schemes
  • Voltage clamping and regulation
  • High-level detecting and mixing in communication systems

Q & A

  1. What is the maximum continuous forward current of the BAS70-06E6433?
    The maximum continuous forward current is 70 mA.
  2. What is the package type of the BAS70-06E6433?
    The package type is SOT-23.
  3. Is the BAS70-06E6433 RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  4. What are the primary uses of the BAS70-06E6433?
    The primary uses include high-speed switching, circuit protection, voltage clamping, and high-level detecting and mixing.
  5. What is the diode configuration of the BAS70-06E6433?
    The diode configuration is Common Anode.
  6. Is the BAS70-06E6433 recommended for new designs?
    No, it is not recommended for new designs; instead, use BAT54A/C/S.
  7. Who is the manufacturer of the BAS70-06E6433?
    The manufacturer is Infineon Technologies AG.
  8. What are some common applications of the BAS70-06E6433?
    Common applications include high-speed switching circuits, circuit protection schemes, voltage clamping, and high-level detecting and mixing.
  9. What is the device type of the BAS70-06E6433?
    The device type is a silicon planar dual Schottky barrier diode.
  10. Where can I find detailed specifications for the BAS70-06E6433?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor sites like Mouser and Digi-Key.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):100 ps
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Operating Temperature - Junction:150°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.08
9,188

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS70-06E6433 BAS70-07E6433 BAS70-05E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 2 Independent 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 70mA (DC) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 100 ps 100 ps 100 ps
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V
Operating Temperature - Junction 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT143-4 PG-SOT23

Related Product By Categories

STPS41L60CG-TR
STPS41L60CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V D2PAK
BAT54CLT1G
BAT54CLT1G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAS40-04LT1G
BAS40-04LT1G
onsemi
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV23C-7-F
BAV23C-7-F
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAS40-06-E3-08
BAS40-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STTH6002CPI
STTH6002CPI
STMicroelectronics
DIODE ARRAY GP 200V 30A 3TOPI
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
MBRB2060CTHE3_B/P
MBRB2060CTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
1N4148UBCCC
1N4148UBCCC
Microchip Technology
SIGNAL OR COMPUTER DIODE
MBRD620CTT4
MBRD620CTT4
onsemi
DIODE ARRAY SCHOTTKY 20V 3A DPAK
BAT54A-13-F-31
BAT54A-13-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS4005WE6327BTSA1
BAS4005WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC817K25WH6327XTSA1
BC817K25WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCP5416H6327XTSA1
BCP5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36