BAS70-06E6433
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Infineon Technologies BAS70-06E6433

Manufacturer No:
BAS70-06E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE - HIGH SPEED SWIT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-06E6433 is a silicon planar dual Schottky barrier diode produced by Infineon Technologies. This component is designed for high-speed switching applications and is known for its reliability and performance in various electronic circuits. It is packaged in a SOT-23 case, making it suitable for compact and efficient designs.

Key Specifications

ParameterValue
Device TypeSilicon planar dual Schottky barrier diode
Maximum Continuous Forward Current70 mA
Package / CaseSOT-23
Diode ConfigurationCommon Anode
RoHS CompliancePb-free (RoHS compliant)

Key Features

  • General-purpose diode for high-speed switching
  • Circuit protection
  • Voltage clamping
  • High-level detecting and mixing
  • Pb-free (RoHS compliant) package

Applications

The BAS70-06E6433 is versatile and can be used in various applications, including:

  • High-speed switching circuits
  • Circuit protection schemes
  • Voltage clamping and regulation
  • High-level detecting and mixing in communication systems

Q & A

  1. What is the maximum continuous forward current of the BAS70-06E6433?
    The maximum continuous forward current is 70 mA.
  2. What is the package type of the BAS70-06E6433?
    The package type is SOT-23.
  3. Is the BAS70-06E6433 RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  4. What are the primary uses of the BAS70-06E6433?
    The primary uses include high-speed switching, circuit protection, voltage clamping, and high-level detecting and mixing.
  5. What is the diode configuration of the BAS70-06E6433?
    The diode configuration is Common Anode.
  6. Is the BAS70-06E6433 recommended for new designs?
    No, it is not recommended for new designs; instead, use BAT54A/C/S.
  7. Who is the manufacturer of the BAS70-06E6433?
    The manufacturer is Infineon Technologies AG.
  8. What are some common applications of the BAS70-06E6433?
    Common applications include high-speed switching circuits, circuit protection schemes, voltage clamping, and high-level detecting and mixing.
  9. What is the device type of the BAS70-06E6433?
    The device type is a silicon planar dual Schottky barrier diode.
  10. Where can I find detailed specifications for the BAS70-06E6433?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor sites like Mouser and Digi-Key.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):100 ps
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Operating Temperature - Junction:150°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BAS70-06E6433 BAS70-07E6433 BAS70-05E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 2 Independent 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 70mA (DC) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 100 ps 100 ps 100 ps
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V
Operating Temperature - Junction 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT143-4 PG-SOT23

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