2N7002L6327HTSA1
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Infineon Technologies 2N7002L6327HTSA1

Manufacturer No:
2N7002L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002L6327HTSA1, produced by Infineon Technologies, is an n-channel enhancement mode MOSFET designed for low-voltage, low-current applications. It is packaged in a small SOT-23 surface mount package, which enhances its suitability for space-constrained designs. This MOSFET is known for its superior switching performance, making it a versatile component for various electronic systems.

Key Specifications

Parameter Symbol Conditions Unit Min.
Drain-Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 µA V - - 60
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250 µA V 1.5 2.1 2.5
Drain-Source On-State Resistance R_DS(on) V_GS = 10 V, I_D = 0.5 A Ω - 1.6 3
Continuous Drain Current I_D T_A = 25 °C A - - 0.3
Power Dissipation P_tot T_A = 25 °C W - - 0.5
Operating and Storage Temperature T_j, T_stg - °C -55 - 150

Key Features

  • Enhancement mode operation
  • Logic level input compatibility
  • Avalanche rated for robustness against voltage spikes
  • Fast switching performance
  • Pb-free lead-plating and RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

  • Consumer electronics
  • Power management functions
  • DC-DC converters
  • Motor control systems
  • Logic level translators
  • Power MOSFET gate drivers
  • Onboard chargers
  • Other switching applications

Q & A

  1. What is the 2N7002L6327HTSA1 MOSFET used for?

    The 2N7002L6327HTSA1 is used in low-voltage, low-current applications such as consumer electronics, power management, DC-DC converters, motor control, and other switching applications.

  2. What is the maximum drain-source breakdown voltage of the 2N7002L6327HTSA1?

    The maximum drain-source breakdown voltage is 60 V.

  3. What is the typical gate threshold voltage of the 2N7002L6327HTSA1?

    The typical gate threshold voltage is 2.1 V.

  4. Is the 2N7002L6327HTSA1 RoHS compliant?
  5. What is the maximum continuous drain current of the 2N7002L6327HTSA1 at 25°C?

    The maximum continuous drain current is 0.3 A at 25°C.

  6. What is the operating temperature range of the 2N7002L6327HTSA1?

    The operating temperature range is -55°C to 150°C.

  7. Is the 2N7002L6327HTSA1 halogen-free?
  8. What is the maximum power dissipation of the 2N7002L6327HTSA1 at 25°C?

    The maximum power dissipation is 0.5 W at 25°C.

  9. What package type does the 2N7002L6327HTSA1 come in?

    The 2N7002L6327HTSA1 comes in a SOT-23 surface mount package.

  10. Is the 2N7002L6327HTSA1 suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-PO
Package / Case:TO-236-3, SC-59, SOT-23-3
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