2N7002L6327HTSA1
  • Share:

Infineon Technologies 2N7002L6327HTSA1

Manufacturer No:
2N7002L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002L6327HTSA1, produced by Infineon Technologies, is an n-channel enhancement mode MOSFET designed for low-voltage, low-current applications. It is packaged in a small SOT-23 surface mount package, which enhances its suitability for space-constrained designs. This MOSFET is known for its superior switching performance, making it a versatile component for various electronic systems.

Key Specifications

Parameter Symbol Conditions Unit Min.
Drain-Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 µA V - - 60
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250 µA V 1.5 2.1 2.5
Drain-Source On-State Resistance R_DS(on) V_GS = 10 V, I_D = 0.5 A Ω - 1.6 3
Continuous Drain Current I_D T_A = 25 °C A - - 0.3
Power Dissipation P_tot T_A = 25 °C W - - 0.5
Operating and Storage Temperature T_j, T_stg - °C -55 - 150

Key Features

  • Enhancement mode operation
  • Logic level input compatibility
  • Avalanche rated for robustness against voltage spikes
  • Fast switching performance
  • Pb-free lead-plating and RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

  • Consumer electronics
  • Power management functions
  • DC-DC converters
  • Motor control systems
  • Logic level translators
  • Power MOSFET gate drivers
  • Onboard chargers
  • Other switching applications

Q & A

  1. What is the 2N7002L6327HTSA1 MOSFET used for?

    The 2N7002L6327HTSA1 is used in low-voltage, low-current applications such as consumer electronics, power management, DC-DC converters, motor control, and other switching applications.

  2. What is the maximum drain-source breakdown voltage of the 2N7002L6327HTSA1?

    The maximum drain-source breakdown voltage is 60 V.

  3. What is the typical gate threshold voltage of the 2N7002L6327HTSA1?

    The typical gate threshold voltage is 2.1 V.

  4. Is the 2N7002L6327HTSA1 RoHS compliant?
  5. What is the maximum continuous drain current of the 2N7002L6327HTSA1 at 25°C?

    The maximum continuous drain current is 0.3 A at 25°C.

  6. What is the operating temperature range of the 2N7002L6327HTSA1?

    The operating temperature range is -55°C to 150°C.

  7. Is the 2N7002L6327HTSA1 halogen-free?
  8. What is the maximum power dissipation of the 2N7002L6327HTSA1 at 25°C?

    The maximum power dissipation is 0.5 W at 25°C.

  9. What package type does the 2N7002L6327HTSA1 come in?

    The 2N7002L6327HTSA1 comes in a SOT-23 surface mount package.

  10. Is the 2N7002L6327HTSA1 suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-PO
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
297

Please send RFQ , we will respond immediately.

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BCX 54-16 E6327
BCX 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30