2N7002L6327HTSA1
  • Share:

Infineon Technologies 2N7002L6327HTSA1

Manufacturer No:
2N7002L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002L6327HTSA1, produced by Infineon Technologies, is an n-channel enhancement mode MOSFET designed for low-voltage, low-current applications. It is packaged in a small SOT-23 surface mount package, which enhances its suitability for space-constrained designs. This MOSFET is known for its superior switching performance, making it a versatile component for various electronic systems.

Key Specifications

Parameter Symbol Conditions Unit Min.
Drain-Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 µA V - - 60
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250 µA V 1.5 2.1 2.5
Drain-Source On-State Resistance R_DS(on) V_GS = 10 V, I_D = 0.5 A Ω - 1.6 3
Continuous Drain Current I_D T_A = 25 °C A - - 0.3
Power Dissipation P_tot T_A = 25 °C W - - 0.5
Operating and Storage Temperature T_j, T_stg - °C -55 - 150

Key Features

  • Enhancement mode operation
  • Logic level input compatibility
  • Avalanche rated for robustness against voltage spikes
  • Fast switching performance
  • Pb-free lead-plating and RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

  • Consumer electronics
  • Power management functions
  • DC-DC converters
  • Motor control systems
  • Logic level translators
  • Power MOSFET gate drivers
  • Onboard chargers
  • Other switching applications

Q & A

  1. What is the 2N7002L6327HTSA1 MOSFET used for?

    The 2N7002L6327HTSA1 is used in low-voltage, low-current applications such as consumer electronics, power management, DC-DC converters, motor control, and other switching applications.

  2. What is the maximum drain-source breakdown voltage of the 2N7002L6327HTSA1?

    The maximum drain-source breakdown voltage is 60 V.

  3. What is the typical gate threshold voltage of the 2N7002L6327HTSA1?

    The typical gate threshold voltage is 2.1 V.

  4. Is the 2N7002L6327HTSA1 RoHS compliant?
  5. What is the maximum continuous drain current of the 2N7002L6327HTSA1 at 25°C?

    The maximum continuous drain current is 0.3 A at 25°C.

  6. What is the operating temperature range of the 2N7002L6327HTSA1?

    The operating temperature range is -55°C to 150°C.

  7. Is the 2N7002L6327HTSA1 halogen-free?
  8. What is the maximum power dissipation of the 2N7002L6327HTSA1 at 25°C?

    The maximum power dissipation is 0.5 W at 25°C.

  9. What package type does the 2N7002L6327HTSA1 come in?

    The 2N7002L6327HTSA1 comes in a SOT-23 surface mount package.

  10. Is the 2N7002L6327HTSA1 suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-PO
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
297

Please send RFQ , we will respond immediately.

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRFP260NPBF
IRFP260NPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW