2N7002L6327HTSA1
  • Share:

Infineon Technologies 2N7002L6327HTSA1

Manufacturer No:
2N7002L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002L6327HTSA1, produced by Infineon Technologies, is an n-channel enhancement mode MOSFET designed for low-voltage, low-current applications. It is packaged in a small SOT-23 surface mount package, which enhances its suitability for space-constrained designs. This MOSFET is known for its superior switching performance, making it a versatile component for various electronic systems.

Key Specifications

Parameter Symbol Conditions Unit Min.
Drain-Source Breakdown Voltage V(BR)DSS V_GS = 0 V, I_D = 250 µA V - - 60
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250 µA V 1.5 2.1 2.5
Drain-Source On-State Resistance R_DS(on) V_GS = 10 V, I_D = 0.5 A Ω - 1.6 3
Continuous Drain Current I_D T_A = 25 °C A - - 0.3
Power Dissipation P_tot T_A = 25 °C W - - 0.5
Operating and Storage Temperature T_j, T_stg - °C -55 - 150

Key Features

  • Enhancement mode operation
  • Logic level input compatibility
  • Avalanche rated for robustness against voltage spikes
  • Fast switching performance
  • Pb-free lead-plating and RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

  • Consumer electronics
  • Power management functions
  • DC-DC converters
  • Motor control systems
  • Logic level translators
  • Power MOSFET gate drivers
  • Onboard chargers
  • Other switching applications

Q & A

  1. What is the 2N7002L6327HTSA1 MOSFET used for?

    The 2N7002L6327HTSA1 is used in low-voltage, low-current applications such as consumer electronics, power management, DC-DC converters, motor control, and other switching applications.

  2. What is the maximum drain-source breakdown voltage of the 2N7002L6327HTSA1?

    The maximum drain-source breakdown voltage is 60 V.

  3. What is the typical gate threshold voltage of the 2N7002L6327HTSA1?

    The typical gate threshold voltage is 2.1 V.

  4. Is the 2N7002L6327HTSA1 RoHS compliant?
  5. What is the maximum continuous drain current of the 2N7002L6327HTSA1 at 25°C?

    The maximum continuous drain current is 0.3 A at 25°C.

  6. What is the operating temperature range of the 2N7002L6327HTSA1?

    The operating temperature range is -55°C to 150°C.

  7. Is the 2N7002L6327HTSA1 halogen-free?
  8. What is the maximum power dissipation of the 2N7002L6327HTSA1 at 25°C?

    The maximum power dissipation is 0.5 W at 25°C.

  9. What package type does the 2N7002L6327HTSA1 come in?

    The 2N7002L6327HTSA1 comes in a SOT-23 surface mount package.

  10. Is the 2N7002L6327HTSA1 suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-PO
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
297

Please send RFQ , we will respond immediately.

Related Product By Categories

STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC860BWE6327
BC860BWE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
ITS716GFUMA1
ITS716GFUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20