BAS40-02LE6327
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Infineon Technologies BAS40-02LE6327

Manufacturer No:
BAS40-02LE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BAS40 - HIGH SPEED SWITCHING, CL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02LE6327 is a silicon Schottky diode produced by Infineon Technologies. This component is designed for high-speed switching applications and is known for its general-purpose use in various electronic circuits. It is packaged in a Pb-free (RoHS compliant) TSLP-2-1 package, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Unit
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 120 mA
Current - Reverse Leakage @ Vr 1 µA @ 30 V
Capacitance @ Vr, F 3 pF @ 0V, 1MHz
Operating Temperature - Junction -55 to 150 °C
Package / Case TSLP-2-1 (SOD-882)
Mounting Type Surface Mount

Key Features

  • General-purpose diode for high-speed switching applications.
  • Circuit protection capabilities.
  • Voltage clamping functionality.
  • High-level detecting and mixing applications.
  • Pb-free (RoHS compliant) package, ensuring environmental sustainability.

Applications

  • High-speed switching circuits.
  • Circuit protection in various electronic systems.
  • Voltage clamping in power supply and signal processing applications.
  • High-level detecting and mixing in communication and signal processing systems.

Q & A

  1. What is the maximum forward voltage (Vf) of the BAS40-02LE6327?

    The maximum forward voltage (Vf) is 1 V at 40 mA.

  2. What is the maximum DC reverse voltage (Vr) of the BAS40-02LE6327?

    The maximum DC reverse voltage (Vr) is 40 V.

  3. What is the average rectified current (Io) of the BAS40-02LE6327?

    The average rectified current (Io) is 120 mA.

  4. What is the reverse leakage current at the maximum reverse voltage?

    The reverse leakage current is 1 µA at 30 V.

  5. What is the capacitance of the BAS40-02LE6327 at 0V and 1MHz?

    The capacitance is 3 pF at 0V and 1MHz.

  6. What is the operating temperature range of the BAS40-02LE6327?

    The operating temperature range is -55°C to 150°C.

  7. What type of package does the BAS40-02LE6327 come in?

    The BAS40-02LE6327 comes in a TSLP-2-1 (SOD-882) package.

  8. Is the BAS40-02LE6327 RoHS compliant?

    Yes, the BAS40-02LE6327 is Pb-free and RoHS compliant.

  9. What are some common applications of the BAS40-02LE6327?

    Common applications include high-speed switching circuits, circuit protection, voltage clamping, and high-level detecting and mixing.

  10. What is the mounting type of the BAS40-02LE6327?

    The mounting type is surface mount.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 µA @ 30 V
Capacitance @ Vr, F:3pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:PG-TSLP-2-1
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS40-02LE6327 BAS4002LE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 120mA (DC) 120mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 µA @ 30 V 1 µA @ 30 V
Capacitance @ Vr, F 3pF @ 0V, 1MHz 3pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 SOD-882
Supplier Device Package PG-TSLP-2-1 PG-TSLP-2-1
Operating Temperature - Junction 150°C 150°C

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