BAS40-02LE6327
  • Share:

Infineon Technologies BAS40-02LE6327

Manufacturer No:
BAS40-02LE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BAS40 - HIGH SPEED SWITCHING, CL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02LE6327 is a silicon Schottky diode produced by Infineon Technologies. This component is designed for high-speed switching applications and is known for its general-purpose use in various electronic circuits. It is packaged in a Pb-free (RoHS compliant) TSLP-2-1 package, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Unit
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 120 mA
Current - Reverse Leakage @ Vr 1 µA @ 30 V
Capacitance @ Vr, F 3 pF @ 0V, 1MHz
Operating Temperature - Junction -55 to 150 °C
Package / Case TSLP-2-1 (SOD-882)
Mounting Type Surface Mount

Key Features

  • General-purpose diode for high-speed switching applications.
  • Circuit protection capabilities.
  • Voltage clamping functionality.
  • High-level detecting and mixing applications.
  • Pb-free (RoHS compliant) package, ensuring environmental sustainability.

Applications

  • High-speed switching circuits.
  • Circuit protection in various electronic systems.
  • Voltage clamping in power supply and signal processing applications.
  • High-level detecting and mixing in communication and signal processing systems.

Q & A

  1. What is the maximum forward voltage (Vf) of the BAS40-02LE6327?

    The maximum forward voltage (Vf) is 1 V at 40 mA.

  2. What is the maximum DC reverse voltage (Vr) of the BAS40-02LE6327?

    The maximum DC reverse voltage (Vr) is 40 V.

  3. What is the average rectified current (Io) of the BAS40-02LE6327?

    The average rectified current (Io) is 120 mA.

  4. What is the reverse leakage current at the maximum reverse voltage?

    The reverse leakage current is 1 µA at 30 V.

  5. What is the capacitance of the BAS40-02LE6327 at 0V and 1MHz?

    The capacitance is 3 pF at 0V and 1MHz.

  6. What is the operating temperature range of the BAS40-02LE6327?

    The operating temperature range is -55°C to 150°C.

  7. What type of package does the BAS40-02LE6327 come in?

    The BAS40-02LE6327 comes in a TSLP-2-1 (SOD-882) package.

  8. Is the BAS40-02LE6327 RoHS compliant?

    Yes, the BAS40-02LE6327 is Pb-free and RoHS compliant.

  9. What are some common applications of the BAS40-02LE6327?

    Common applications include high-speed switching circuits, circuit protection, voltage clamping, and high-level detecting and mixing.

  10. What is the mounting type of the BAS40-02LE6327?

    The mounting type is surface mount.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 µA @ 30 V
Capacitance @ Vr, F:3pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:PG-TSLP-2-1
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.08
6,809

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS40-02LE6327 BAS4002LE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 120mA (DC) 120mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 µA @ 30 V 1 µA @ 30 V
Capacitance @ Vr, F 3pF @ 0V, 1MHz 3pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 SOD-882
Supplier Device Package PG-TSLP-2-1 PG-TSLP-2-1
Operating Temperature - Junction 150°C 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAV70WE6327BTSA1
BAV70WE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
MMBTA42LT1HTSA1
MMBTA42LT1HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23
BCP5316H6327XTSA1
BCP5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK