SBRS8130LT3G-IR02
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onsemi SBRS8130LT3G-IR02

Manufacturer No:
SBRS8130LT3G-IR02
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBRS8130LT3G-IR02 is a Schottky Power Rectifier produced by onsemi, designed for high-efficiency, low-voltage, and high-frequency rectification applications. This device utilizes the Schottky Barrier principle in a large area metal-to-silicon power diode, offering state-of-the-art geometry features and epitaxial construction with oxide passivation and metal overlay contact.

Ideally suited for surface mount applications where compact size and weight are critical, this rectifier is also used as free-wheeling and polarity protection diodes. The SBRS8130LT3G-IR02 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V
Working Peak Reverse Voltage VRWM 30 V
DC Blocking Voltage VR 30 V
Average Rectified Forward Current (TL = 150 °C) IF(AV) 8 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 130 A
Operating Junction Temperature TJ -65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 8 A, TJ = 25°C) VF 0.55 V
Thermal Resistance, Junction-to-Lead RθJL 13 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W

Key Features

  • Small, compact surface mountable package with J-bend leads.
  • Rectangular package for automated handling.
  • Highly stable oxide passivated junction.
  • Very high blocking voltage.
  • High operating junction temperature up to 175°C.
  • Guard-ring for stress protection.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free devices with corrosion-resistant and readily solderable terminal leads.

Applications

  • Low voltage, high frequency rectification.
  • Free-wheeling and polarity protection diodes in surface mount applications.
  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • General-purpose rectification in power supplies, DC-DC converters, and other electronic circuits.
  • Compact and weight-critical systems where space is limited.

Q & A

  1. What is the peak repetitive reverse voltage of the SBRS8130LT3G-IR02?

    The peak repetitive reverse voltage (VRRM) is 30 V.

  2. What is the average rectified forward current of this rectifier at 150°C?

    The average rectified forward current (IF(AV)) is 8 A at 150°C.

  3. What is the maximum operating junction temperature for this device?

    The maximum operating junction temperature (TJ) is 175°C.

  4. Is the SBRS8130LT3G-IR02 AEC-Q101 qualified?
  5. What is the thermal resistance from junction to lead for this device?

    The thermal resistance from junction to lead (RθJL) is 13 °C/W.

  6. What is the maximum instantaneous forward voltage at 8 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 8 A and 25°C is 0.55 V.

  7. Is the SBRS8130LT3G-IR02 Pb-free?
  8. What are the typical applications of the SBRS8130LT3G-IR02?

    Typical applications include low voltage, high frequency rectification, free-wheeling and polarity protection diodes, and automotive systems.

  9. What is the package type of the SBRS8130LT3G-IR02?

    The package type is a surface mountable SMB package with J-bend leads.

  10. Is the SBRS8130LT3G-IR02 suitable for use in life support systems or medical devices?

    No, the SBRS8130LT3G-IR02 is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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