IRLML9301TRPBF
  • Share:

Infineon Technologies IRLML9301TRPBF

Manufacturer No:
IRLML9301TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 3.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML9301TRPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It belongs to the StrongIRFET™ power MOSFET family, which is optimized for low RDS(on) and high current capability. This transistor is designed for low frequency applications and is known for its enhanced performance and reliability.

Key Specifications

SpecificationValue
ManufacturerInfineon Technologies
Type of TransistorP-MOSFET
TechnologyHEXFET®
PolarisationUnipolar
Drain-Source Voltage-30V
Drain Current-3.6A
Power Dissipation1.3W
CaseSOT23
MountingSMD
Kind of ChannelEnhanced
Features of Semiconductor DevicesLogic Level

Key Features

  • Low RDS(on) for efficient power handling
  • High current capability of -3.6A
  • Enhanced channel for improved performance
  • Logic level compatibility for easy integration with digital circuits
  • SOT23 package for compact and surface-mount design

Applications

The IRLML9301TRPBF is suitable for various low frequency applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • General-purpose switching applications

Q & A

  1. What is the drain-source voltage rating of the IRLML9301TRPBF?
    The drain-source voltage rating is -30V.
  2. What is the maximum drain current of the IRLML9301TRPBF?
    The maximum drain current is -3.6A.
  3. What is the power dissipation of the IRLML9301TRPBF?
    The power dissipation is 1.3W.
  4. What type of package does the IRLML9301TRPBF use?
    The IRLML9301TRPBF uses the SOT23 package.
  5. Is the IRLML9301TRPBF suitable for high-frequency applications?
    No, it is optimized for low frequency applications.
  6. What technology is used in the IRLML9301TRPBF?
    The IRLML9301TRPBF uses HEXFET® technology.
  7. Is the IRLML9301TRPBF compatible with logic level signals?
    Yes, it is compatible with logic level signals.
  8. What is the mounting type of the IRLML9301TRPBF?
    The mounting type is Surface Mount (SMD).
  9. What family does the IRLML9301TRPBF belong to?
    The IRLML9301TRPBF belongs to the StrongIRFET™ power MOSFET family.
  10. What are some common applications of the IRLML9301TRPBF?
    Common applications include power management systems, DC-DC converters, motor control circuits, and general-purpose switching.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:64mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:388 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.55
58

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLML9301TRPBF IRLML9303TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 3.6A, 10V 165mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10µA 2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 4.5 V 2 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 388 pF @ 25 V 160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847C-B5000
BC847C-B5000
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
TLE4267GMXUMA2
TLE4267GMXUMA2
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-61