IRLML9301TRPBF
  • Share:

Infineon Technologies IRLML9301TRPBF

Manufacturer No:
IRLML9301TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 3.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML9301TRPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It belongs to the StrongIRFET™ power MOSFET family, which is optimized for low RDS(on) and high current capability. This transistor is designed for low frequency applications and is known for its enhanced performance and reliability.

Key Specifications

SpecificationValue
ManufacturerInfineon Technologies
Type of TransistorP-MOSFET
TechnologyHEXFET®
PolarisationUnipolar
Drain-Source Voltage-30V
Drain Current-3.6A
Power Dissipation1.3W
CaseSOT23
MountingSMD
Kind of ChannelEnhanced
Features of Semiconductor DevicesLogic Level

Key Features

  • Low RDS(on) for efficient power handling
  • High current capability of -3.6A
  • Enhanced channel for improved performance
  • Logic level compatibility for easy integration with digital circuits
  • SOT23 package for compact and surface-mount design

Applications

The IRLML9301TRPBF is suitable for various low frequency applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • General-purpose switching applications

Q & A

  1. What is the drain-source voltage rating of the IRLML9301TRPBF?
    The drain-source voltage rating is -30V.
  2. What is the maximum drain current of the IRLML9301TRPBF?
    The maximum drain current is -3.6A.
  3. What is the power dissipation of the IRLML9301TRPBF?
    The power dissipation is 1.3W.
  4. What type of package does the IRLML9301TRPBF use?
    The IRLML9301TRPBF uses the SOT23 package.
  5. Is the IRLML9301TRPBF suitable for high-frequency applications?
    No, it is optimized for low frequency applications.
  6. What technology is used in the IRLML9301TRPBF?
    The IRLML9301TRPBF uses HEXFET® technology.
  7. Is the IRLML9301TRPBF compatible with logic level signals?
    Yes, it is compatible with logic level signals.
  8. What is the mounting type of the IRLML9301TRPBF?
    The mounting type is Surface Mount (SMD).
  9. What family does the IRLML9301TRPBF belong to?
    The IRLML9301TRPBF belongs to the StrongIRFET™ power MOSFET family.
  10. What are some common applications of the IRLML9301TRPBF?
    Common applications include power management systems, DC-DC converters, motor control circuits, and general-purpose switching.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:64mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:388 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.55
58

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRLML9301TRPBF IRLML9303TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 3.6A, 10V 165mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10µA 2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 4.5 V 2 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 388 pF @ 25 V 160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4

Related Product By Brand

BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI