Overview
The PBSS4160DPN,115 is a 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor pair manufactured by Nexperia USA Inc. This transistor is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package, making it suitable for a variety of applications requiring high efficiency and compact design. The device is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PBSS4160DPN |
| Package | SOT457 (TSOP6) |
| Package size (mm) | 2.9 x 1.5 x 1 |
| Product status | Production |
| Channel type | NPN/PNP |
| Number of transistors | 2 |
| Ptot [max] (mW) | 560.0 |
| VCEO [max] (V) | 60.0 |
| IC [max] (A) | 1.0 |
| VCEsat [max] (NPN) (mV) | 250.0 |
| VCEsat [max] (PNP) (mV) | -330.0 |
| RCEsat@IC [max] (mΩ) | 330.0 |
| hFE [min] | 250.0 |
| fT [typ] (MHz) | 220.0 |
Key Features
- Low collector-emitter saturation voltage (VCEsat)
- High collector current capability (IC and ICM)
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area compared to conventional transistors
- AEC-Q101 qualified for automotive applications
Applications
- Complementary MOSFET driver
- Half and full bridge motor drivers
- Dual low power switches (e.g., motors, fans)
- Automotive applications
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the PBSS4160DPN,115? The maximum collector-emitter voltage is 60 V.
- What is the package type of the PBSS4160DPN,115? The package type is SOT457 (TSOP6).
- What is the maximum collector current (IC) of the PBSS4160DPN,115? The maximum collector current is 1 A.
- Is the PBSS4160DPN,115 AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
- What are the typical applications of the PBSS4160DPN,115? Typical applications include complementary MOSFET drivers, half and full bridge motor drivers, dual low power switches, and automotive applications.
- What is the minimum collector current gain (hFE) of the PBSS4160DPN,115? The minimum collector current gain is 250.
- What is the maximum power dissipation (Ptot) of the PBSS4160DPN,115? The maximum power dissipation is 560 mW.
- What is the package size of the PBSS4160DPN,115? The package size is 2.9 x 1.5 x 1 mm.
- How many transistors are included in the PBSS4160DPN,115? The device includes 2 transistors.
- What is the typical transition frequency (fT) of the PBSS4160DPN,115? The typical transition frequency is 220 MHz.
